component

S60N10

Public Made by Adom

by adom

HL MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S60N10

HL · MOSFETs · TO-252

S60N10 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V maximum, with a typical threshold of 1.7 V (1 V min, 2.5 V max).
2 D passive Drain (middle lead, also connected to the exposed tab); drain-source voltage is rated at 100 V, with 60 A continuous current at TC = 25 °C.
3 S passive Source; the body diode carries up to 60 A continuous source current with a 1.2 V maximum forward voltage.

Key specifications

Parameter Value
Manufacturer HL
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID 60 A T = 25 1
Continuous Drain Current ID 28.5 A T = 100 1
Pulsed Drain Current IDM 180 A 1
Single Pulsed Avalanche Energy EAS 80 mJ 1
Power Dissipation PD 67.5 W T = 25 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance from Junction-to-Lead RθJC 1.85 ℃/W 1
Thermal Resistance from Junction-to-Ambient RθJA 45 ℃ Surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 3) 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Gate-Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current (TJ=25°C) IDSS 1 µA VDS = 100V, VGS = 0V 2
Zero Gate Voltage Drain Current (TJ=100°C) IDSS 100 µA VDS = 100V, VGS = 0V 2
Gate-Threshold Voltage VGS(th) 1 1.7 2.5 V VDS = VGS, ID = 250µA 2
Drain-Source on-Resistance RDS(on) 13.5 17 mΩ VGS = 10V, ID = 20A 2
Drain-Source on-Resistance RDS(on) 17 20 mΩ VGS = 4.5V, ID = 10A 2
Diode Forward Voltage VSD 1.2 V IS = 20A, VGS = 0V 2
Continuous Source Current IS 60 A 2
Forward Transconductance gfs 54 S VDS = 10V, ID = 20A 2
Input Capacitance Ciss 1208 pF VDS = 50V, VGS = 0V, f = 1MHz 2
Output Capacitance Coss 144 pF 2
Reverse Transfer Capacitance Crss 11.3 pF 2
Gate Resistance Rg 1.8 Ω f = 1MHz 2
Total Gate Charge Qg 22.7 nC VGS = 10V, VDS = 50V, ID = 20A 2
Gate-Source Charge Qgs 3 nC 2
Gate-Drain Charge Qgd 5 nC 2
Turn-on Delay Time td(on) 9.2 ns VGS = 10V, VDD = 50V, RG = 3Ω, ID = 20A 2
Rise Time tr 3.6 ns 2
Turn-off Delay Time td(off) 25.6 ns 2
Fall Time tf 4.4 ns 2
Body Diode Reverse Recovery Time trr 30 ns IF = 20A, dI/dt = 100A/µs 2
Body Diode Reverse Recovery Charge Qrr 42 nC 2

CAD (KiCad official)

  • Symbol: S60N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: s60n10-etched.step / s60n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s60n10.step / s60n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (6 pp, sha256 b9228fee56b4186f, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF