component
S1M040120D
Public Made by Adomby adom
Sichainsemi Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3L. Datasheet-verified pinout, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownS1M040120D
Sichainsemi · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3L
S1M040120D from Sichainsemi, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate control input; recommended operational VGS = −4/+15 V, absolute maximum −8/+22 V; internal gate resistance Rg,int = 0.9 Ω (typ). |
| 2 | D | passive | Drain; rated VDS = 1200 V (max), continuous ID = 73 A at TC = 25 °C; also internally connected to the mounting tab. |
| 3 | S | passive | Source; continuous diode forward current IS = 76 A (VGS = −4 V, TC = 25 °C); body-diode VSD = 3.8 V typ at ISD = 20 A, VGS = −4 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Sichainsemi |
| Package | TO-247-3L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
S1M040120D - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files:
s1m040120d-etched.step/s1m040120d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s1m040120d.step/s1m040120d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Sichainsemi datasheet (14 pp, sha256
244d7c4f321487e0, retrieved 2026-09-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-sonnet-4-6(text+vision), consensusclaude-opus-4-7(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).