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Contents

README

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S1D030120C

Sichainsemi · SiC Diodes · TO-247-2L

S1D030120C from Sichainsemi, in a TO-247-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 PIN1 passive Pin 1 of the TO-247-2L package, shown on the package drawing; the datasheet does not name it, but the diode has two terminals (cathode/anode assignment is not stated in the text).
2 PIN2 passive Pin 2 of the TO-247-2L package, shown on the package drawing; the datasheet does not name it, and the cathode/anode assignment is not stated in the text.

Key specifications

Parameter Value
Manufacturer Sichainsemi
Package TO-247-2L
Category Silicon Carbide (SiC) Devices
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward Voltage VF 1.4 1.8 V IF = 30A, TJ = 25℃ 2
Forward Voltage VF 1.9 2.5 V IF = 30A, TJ = 175℃ 2
Reverse Current IR 1 150 µA VR = 1200V, TJ = 25℃ 2
Reverse Current IR 15 300 µA VR = 1200V, TJ = 175℃ 2
Repetitive Peak Reverse Voltage VRRM 1200 V Tc = 25℃ 1
Surge Peak Reverse Voltage VRSM 1300 V Tc = 25℃ 1
DC Peak Reverse Voltage VR 1200 V Tc = 25℃ 1
Continuous Forward Current IF 90 A Tc = 25˚C 1
Continuous Forward Current IF 42 A Tc = 135˚C 1
Continuous Forward Current IF 30 A Tc = 152˚C 1
Non-Repetitive Peak Forward Surge Current IFSM 200 A Tc = 25℃, tp = 10 ms, Half Sine Pulse 1
Power Dissipation Ptot 375 W Tc = 25˚C 1
Power Dissipation Ptot 162 W Tc = 110˚C 1
Diode dV/dt ruggedness dV/dt 200 V/ns VR = 0~960V 1
∫i2dt ∫i2dt 219 A2S Tc = 25℃, tp = 10 ms 1
Operating Junction Range Tstg, TJ -55 175 ℃ 1
Total Capacitive Charge Qc 172 nC VR = 800V, IF = 15A, di/dt = 200A/µs, TJ = 25℃ 2
Total Capacitance C 3182 pF VR = 0V, TJ = 25℃, f = 1MHZ 2
Total Capacitance C 153 pF VR = 400V, TJ = 25℃, f = 1MHZ 2
Total Capacitance C 112 pF VR = 800V, TJ = 25℃, f = 1MHZ 2
Capacitance Stored Energy Ec 91 μJ VR = 800V 2
Thermal Resistance from Junction to Case RθJC 0.4 °C/W 2

CAD (KiCad official)

  • Symbol: S1D030120C
  • Footprint: Package_TO_SOT_THT:TO-247-2_Vertical
  • 3D model: TO-247-2L (KiCad packages3D, STEP)
  • 3D model files: s1d030120c-etched.step / s1d030120c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s1d030120c.step / s1d030120c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Sichainsemi datasheet (5 pp, sha256 50b7e5133ab824fd, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF