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S1D030120C
Public Made by Adomby adom
Sichainsemi SiC Diodes, TO-247-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownS1D030120C
Sichainsemi · SiC Diodes · TO-247-2L
S1D030120C from Sichainsemi, in a TO-247-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | PIN1 | passive | Pin 1 of the TO-247-2L package, shown on the package drawing; the datasheet does not name it, but the diode has two terminals (cathode/anode assignment is not stated in the text). |
| 2 | PIN2 | passive | Pin 2 of the TO-247-2L package, shown on the package drawing; the datasheet does not name it, and the cathode/anode assignment is not stated in the text. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Sichainsemi |
| Package | TO-247-2L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Voltage | VF | 1.4 | 1.8 | V | IF = 30A, TJ = 25℃ | 2 | |
| Forward Voltage | VF | 1.9 | 2.5 | V | IF = 30A, TJ = 175℃ | 2 | |
| Reverse Current | IR | 1 | 150 | µA | VR = 1200V, TJ = 25℃ | 2 | |
| Reverse Current | IR | 15 | 300 | µA | VR = 1200V, TJ = 175℃ | 2 | |
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | Tc = 25℃ | 1 | ||
| Surge Peak Reverse Voltage | VRSM | 1300 | V | Tc = 25℃ | 1 | ||
| DC Peak Reverse Voltage | VR | 1200 | V | Tc = 25℃ | 1 | ||
| Continuous Forward Current | IF | 90 | A | Tc = 25˚C | 1 | ||
| Continuous Forward Current | IF | 42 | A | Tc = 135˚C | 1 | ||
| Continuous Forward Current | IF | 30 | A | Tc = 152˚C | 1 | ||
| Non-Repetitive Peak Forward Surge Current | IFSM | 200 | A | Tc = 25℃, tp = 10 ms, Half Sine Pulse | 1 | ||
| Power Dissipation | Ptot | 375 | W | Tc = 25˚C | 1 | ||
| Power Dissipation | Ptot | 162 | W | Tc = 110˚C | 1 | ||
| Diode dV/dt ruggedness | dV/dt | 200 | V/ns | VR = 0~960V | 1 | ||
| ∫i2dt | ∫i2dt | 219 | A2S | Tc = 25℃, tp = 10 ms | 1 | ||
| Operating Junction Range | Tstg, TJ | -55 | 175 | ℃ | 1 | ||
| Total Capacitive Charge | Qc | 172 | nC | VR = 800V, IF = 15A, di/dt = 200A/µs, TJ = 25℃ | 2 | ||
| Total Capacitance | C | 3182 | pF | VR = 0V, TJ = 25℃, f = 1MHZ | 2 | ||
| Total Capacitance | C | 153 | pF | VR = 400V, TJ = 25℃, f = 1MHZ | 2 | ||
| Total Capacitance | C | 112 | pF | VR = 800V, TJ = 25℃, f = 1MHZ | 2 | ||
| Capacitance Stored Energy | Ec | 91 | μJ | VR = 800V | 2 | ||
| Thermal Resistance from Junction to Case | RθJC | 0.4 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
S1D030120C - Footprint:
Package_TO_SOT_THT:TO-247-2_Vertical - 3D model: TO-247-2L (KiCad packages3D, STEP)
- 3D model files:
s1d030120c-etched.step/s1d030120c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s1d030120c.step/s1d030120c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Sichainsemi datasheet (5 pp, sha256
50b7e5133ab824fd, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).