component
S160N06HG
Public Made by Adomby adom
HL MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| s160n06hg-etched.glb | 13d ago |
| s160n06hg-etched.step | 13d ago |
| s160n06hg-hero.glb | 13d ago |
| s160n06hg-hero.overlay.json | 13d ago |
| s160n06hg.glb | 13d ago |
| s160n06hg.kicad_mod | 13d ago |
| s160n06hg.kicad_sym | 13d ago |
| s160n06hg.lbr | 13d ago |
| s160n06hg.step | 13d ago |
S160N06HG
HL · MOSFETs · TO-263
S160N06HG from HL, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; gate-source voltage is rated ±20 V. |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 60 V and continuous drain current is 160 A at TC=25°C. |
| 3 | S | passive | Source terminal; continuous source current is rated 160 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HL |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 160 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 101.2 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 640 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 352.8 | mJ | 1 | |||
| Avalanche Current | IAS | 51 | A | 1 | |||
| Total Power Dissipation | PD | 96 | W | TC = 25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 48 | ℃/W | 2 | |||
| Thermal Resistance Junction-Case | RθJC | 1.3 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V,ID=250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=60V,VGS=0V,TJ=25℃ | 2 | ||
| Gate-Source Leakage current | lGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 2.8 | 4 | V | VGS=VDS,ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 2.1 | 3 | mΩ | VGS=10V,ID=24A | 2 | |
| Continuous Source Current | IS | 160 | A | VG=VD=0V,Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=24A,TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
S160N06HG - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
s160n06hg-etched.step/s160n06hg-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s160n06hg.step/s160n06hg.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HL datasheet (7 pp, sha256
2a896961bd2e19d1, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).