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S150P06G

Public Made by Adom

by adom

HL MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S150P06G

HL · MOSFETs · TO-263

S150P06G from HL, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET, with gate-source voltage rated at ±20 V (VGS).
2 D passive Drain terminal, rated for drain-source voltage VDS = -60 V and continuous drain current ID = -150 A at TC = 25°C.
3 S passive Source terminal, the reference for the gate-source voltage VGS of ±20 V.

Key specifications

Parameter Value
Manufacturer HL
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -150 A TC=25°C 1
Continuous Drain Current ID -91.7 A TC=100°C 1
Pulsed Drain Current IDM -580 A Note 1: repetitive rating; pulse width limited by maximum junction temperature 1
Single Pulse Avalanche Energy EAS 2058 mJ Note 2: VDD=30V, L=0.3mH, RG=25Ω, Starting Tj=25℃ 1
Power Dissipation PD 183 W TC = 25℃ 1
Operating junction and storage temperature TJ, TSTG -55 150 ℃ 1
Maximum Temperature for Soldering TL 260 ℃ 1
Thermal Resistance Junction-Case RθJC 0.68 ℃/W 2
Thermal Resistance, Junction-to-Ambient RθJA 60 ℃/W 2
Drain-Source Breakdown Voltage V(BR)DSS -60 V VGS = 0V, ID = -250µA 2
Gate-body Leakage current lGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = -60V, VGS = 0V 2
Gate-Threshold Voltage VGS(th) -2 -2.4 -2.8 V VDS =VGS , ID = -250µA 2
Drain-Source On-Resistance RDS(on) 3.4 4.1 mΩ VGS = -10V, ID = -20A 2
Diode Forward Current IS -150 A TC=25℃ 2
Diode Forward Voltage VSD -1.2 V IS=-20A, VGS=0V 2
Input Capacitance CISS 9123 pF VDS = -30V,VGS =0V, f =1MHz 2
Output Capacitance COSS 1583 pF 2
Reverse Transfer Capacitance CRSS 85.6 pF 2
Total Gate Charge Qg 135 nC VGS = -10V,VDS = -30V, ID = -10A 2
Gate-Source Charge Qgs 28 nC 2
Gate-Drain Charge Qgd 22.4 nC 2
Turn-On Delay Time Td(on) 70 ns VGS = -10V, VDS = -30V, RG = 3Ω, ID = -10A 2
Rise Time TR 45 ns 2
Turn-Off Delay Time Td(off) 165 ns 2
Fall Time TF 50 ns 2
Reverse Recovery time Trr 45 ns IS=-10A, VDD=-30V, dI/dt=100A/μs 2
Reverse Recovery Charge Qrr 100 nC 2

CAD (KiCad official)

  • Symbol: S150P06G
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: s150p06g-etched.step / s150p06g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s150p06g.step / s150p06g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (8 pp, sha256 7c81453ad6666c39, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF