component

S12N10

Public Made by Adom

by adom

HL MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S12N10

HL · MOSFETs · TO-252

S12N10 from HL, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V.
2 D passive Drain of the N-channel MOSFET (100 V VDS, 12 A continuous at VGS = 10 V), connected internally to the exposed drain tab.
3 S passive Source of the N-channel MOSFET, which is the body diode anode side.

Key specifications

Parameter Value
Manufacturer HL
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 110 V VGS=0V, ID=250μA 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.8 3 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 95 140 mΩ VGS=10V, ID=3A 2
Input Capacitance Ciss 196 pF VDS=50V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 25.9 pF VDS=50V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 21.4 pF VDS=50V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 4.3 nC VDS=50V, ID=3A, VGS=10V 2
Gate-Source Charge Qgs 3.5 nC VDS=50V, ID=3A, VGS=10V 2
Gate-Drain (Miller) Charge Qgd 3.1 nC VDS=50V, ID=3A, VGS=10V 2
Turn-On Delay Time td(on) 14.7 ns VDD=50V, ID=3A, RG=2Ω, VGS=10V 2
Turn-On Rise Time tr 3.5 ns VDD=50V, ID=3A, RG=2Ω, VGS=10V 2
Turn-Off Delay Time td(off) 20.9 ns VDD=50V, ID=3A, RG=2Ω, VGS=10V 2
Turn-Off Fall Time tf 2.7 ns VDD=50V, ID=3A, RG=2Ω, VGS=10V 2
Maximum Continuous Drain to Source Diode Forward Current IS 4.5 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 12 A 2
Drain to Source Diode Forward Voltage VSD 1.3 V VGS=0V, IS=3A 2
Body Diode Reverse Recovery Time trr 32.1 ns VGS=0V, IF=3A, di/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 39.4 nC 2
Peak Reverse Recovery Current Irrm 2.1 A 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS 20 V 1
Continuous Drain Current ID 12 A T=25℃, VGS=10V 1
Continuous Drain Current ID 3.2 A T=70℃, VGS=10V 1
Pulsed Drain Current IDM 11 A 1
Total Power Dissipation PD 1 W T=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W 1
Thermal Resistance Junction-Case RθJC 80 ℃/W 1

CAD (KiCad official)

  • Symbol: S12N10
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: s12n10-etched.step / s12n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s12n10.step / s12n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HL datasheet (5 pp, sha256 c3cf158e88ec3333, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF