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S-LN2308ELT1G

Public Made by Adom

by adom

LRC MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S-LN2308ELT1G

LRC · MOSFETs · SOT-23

S-LN2308ELT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input MOSFET gate terminal; gate-to-source voltage is rated ±20 V continuous (VGS), and the gate is ESD protected source-to-gate.
2 Source passive MOSFET source terminal of the 60 V N-channel device; the datasheet gives no source-specific limit, and the device ratings are VDSS 60 V and continuous drain current 2.6 A at TA = 25°C.
3 Drain passive MOSFET drain terminal of the 60 V N-channel device; drain-source voltage is rated VDSS 60 V and continuous drain current is 2.6 A at TA = 25°C (pulsed IDM 10.4 A).

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V Ta = 25°C 1
Gate-Source Voltage, Continuous VGS -20 20 V Ta = 25°C 1
Drain Current, Continuous ID 2.6 A TA = 25°C 1
Drain Current, Continuous ID 2 A TA = 70°C 1
Drain Current, Pulsed IDM 10.4 A Pulsed (Note 1) 1
Junction and Storage Temperature TJ,Tstg -55 150 ℃ 1
Maximum Power Dissipation PD 0.9 W 1
Thermal Resistance, Junction-to-Ambient RJA 140 ℃/W 1-in² 2oz Cu PCB board (Note 2) 1
Thermal Resistance, Junction-to-Case RJC 105 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0, ID = 250μA 2
Gate Threshold Voltage VGS(th) 1.5 2.5 V VDS = VGS, ID = 250μA 2
Gate Body Leakage IGSS -10 10 μA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 48V, VGS = 0V 2
Static Drain-Source On-State Resistance RDS(on) 100 mΩ VGS = 10 V, ID = 2 A 2
Static Drain-Source On-State Resistance RDS(on) 120 mΩ VGS = 4.5 V, ID = 2 A 2
Diode Forward Voltage VSD 0.7 1.3 V IS = 0.5A, VGS = 0V 2

CAD (KiCad official)

  • Symbol: S-LN2308ELT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s-ln2308elt1g-etched.step / s-ln2308elt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-ln2308elt1g.step / s-ln2308elt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 ed644020d1098687, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF