component
S-LMBTA56LT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownS-LMBTA56LT1G
LRC · Bipolar (BJT) · SOT-23
S-LMBTA56LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, which controls the device; the datasheet gives no separate limit for this pin. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the datasheet lists the emitter-base voltage limit VEBO of -4 V for this junction. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; the datasheet rates collector-emitter voltage VCEO at -80 V and continuous collector current IC at -500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | VBR(CEO) | -80 | V | IC = -1 mA, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | VBR(CBO) | -80 | V | IC = -100μA, IE = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | VBR(EBO) | -4 | V | IE = -100 μA, IC = 0 | 2 | ||
| Collector Cutoff Current | ICES | -0.1 | μA | VCE = -60 V, IE = 0 | 2 | ||
| Collector Cutoff Current | ICBO | -100 | nA | VCB = -80 V, IE = 0 | 2 | ||
| Emitter-Base cut-off current | IEBO | -100 | nA | IC = 0, VEB = -6V | 2 | ||
| Collector-Emitter cutoff Current | ICEO | -10 | μA | VCE = -80V, IB = 0 | 2 | ||
| DC Current Gain | HFE | 100 | IC = -10 mA, VCE = -1 V | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.25 | V | IC = -100 mA, IB = -10 mA | 2 | ||
| Base-Emitter turn on voltage | VBE(on) | -1.2 | V | IC = -100 mA, VCE = -1 V | 2 | ||
| Current-Gain, Bandwidth Product | fT | 50 | MHz | IC = -100mA, VCE = -1V, f = 100MHz | 2 | ||
| Output Capacitance | Cobo | 5.3 | pF | VCB = -10V, IE = 0, f = 1MHz | 2 | ||
| Input Capacitance | Cibo | 78 | pF | VEB = -0.5V, IC = 0, f = 1MHz | 2 | ||
| Collector-Emitter Voltage | VCEO | -80 | V | 1 | |||
| Collector-Base Voltage | VCBO | -80 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -4 | V | 1 | |||
| Collector Current, Continuous | IC | -500 | mA | 1 | |||
| Junction and Storage temperature | TJ,Tstg | -55 | 150 | ºC | 1 | ||
| Total Device Dissipation, FR-5 Board (Note 1) | PD | 225 | mW | FR-5 Board (Note 1) @ TA = 25ºC | 1 | ||
| Derate above 25ºC | 1.8 | mW/ºC | Derate above 25ºC | 1 | |||
| Thermal Resistance, Junction-to-Ambient (Note 1) | RθJA | 556 | ºC/W | Junction-to-Ambient (Note 1) | 1 |
CAD (KiCad official)
- Symbol:
S-LMBTA56LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
s-lmbta56lt1g-etched.step/s-lmbta56lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s-lmbta56lt1g.step/s-lmbta56lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
7bc6a910bf65e797, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).