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S-LMBTA42LT1G

LRC · Bipolar (BJT) · SOT-23

S-LMBTA42LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the device; the datasheet's absolute maximum emitter-base voltage (VEBO) is 6 V and the collector current limit IC is 500 mA.
2 EMITTER passive Emitter terminal of the device; the datasheet's absolute maximum emitter-base voltage (VEBO) is 6 V and the collector current limit IC is 500 mA.
3 COLLECTOR passive Collector terminal of the device; the datasheet's absolute maximum collector-base voltage (VCBO) and collector-emitter voltage (VCEO) are each 300 V, and the collector current limit IC is 500 mA.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage VBR(CEO) 300 V IC = 1.0 mA, IB = 0 2
Collector-Base Breakdown Voltage VBR(CBO) 300 V IC = 100 μA, IE = 0 2
Emitter-Base Breakdown Voltage VBR(EBO) 6 V IE = 100 µA, IC = 0 2
Collector Cutoff Current ICBO 0.1 µA VCB = 200 V, IE = 0 2
Emitter Cutoff Current IEBO 0.1 µA VEB = 6.0 V, IC = 0 2
DC Current Gain HFE 40 IC = 1.0 mA, VCE = 10 V 2
DC Current Gain HFE 25 IC = 30 mA, VCE = 10 V 2
Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC = 20 mA, IB = 2.0 mA 2
Base-emitter saturation voltage VBE(sat) 0.9 V IC = 20 mA, IB = 2.0 mA 2
Transition frequency fT 50 MHz VCE = 20 V, IC = 10 mA, f = 100 MHz 2
Collector-Base Capacitance Ccb 3 pF VCB = 20 V, IE = 0, f = 1.0 MHz 2
Collector-Base Voltage VCBO 300 V Ta = 25ºC 1
Collector-Emitter Voltage VCEO 300 V Ta = 25ºC 1
Emitter-Base Voltage VEBO 6 V Ta = 25ºC 1
Collector Current IC 500 mA Ta = 25ºC 1
Total Device Dissipation, FR-5 Board (Note 1) @ TA = 25ºC PD 300 mW FR-5 board, 1.0×0.75×0.062 in. 1
Derate above 25ºC (FR-5 Board) PD 2.4 mW/℃ Derate above 25ºC, FR-5 board 1
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RΘJA 417 ℃/W FR-5 board 1
Total Device Dissipation, Alumina Substrate (Note 2) @ TA = 25ºC PD 225 mW Alumina substrate 0.4×0.3×0.024 in. 99.5% alumina 1
Derate above 25ºC (Alumina Substrate) PD 1.8 mW/℃ Derate above 25ºC, alumina substrate 1
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RΘJA 556 ℃/W Alumina substrate 1
Junction and Storage Temperature TJ,Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: S-LMBTA42LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s-lmbta42lt1g-etched.step / s-lmbta42lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lmbta42lt1g.step / s-lmbta42lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (5 pp, sha256 0a3f260ee7137141, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF