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S-LMBT5401LT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S-LMBT5401LT1G

LRC · Bipolar (BJT) · SOT-23

S-LMBT5401LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the transistor; base-emitter saturation voltage VBE(sat) is specified at a maximum of -1 V for IC = -10 mA with IB = -1.0 mA and for IC = -50 mA with IB = -5.0 mA.
2 EMITTER passive Emitter terminal; emitter-base breakdown voltage V(BR)EBO is -5 V minimum and the emitter-base cutoff current IEBO is at most -50 nA at VEB = -5.0 V.
3 COLLECTOR passive Collector terminal; the device limits are VCEO -150 V, VCBO -160 V and continuous collector current IC -500 mA (absolute maximum ratings, Ta = 25 ºC).

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -150 V 1
Collector-Base Voltage VCBO -160 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -500 mA 1
Junction and Storage Temperature TJ,Tstg -55 150 ℃ 1
Total Device Dissipation, FR-5 Board PD 225 mW FR-5 board (Note 1), TA = 25°C 1
Derate above 25°C, FR-5 Board 1.8 mW/℃ FR-5 board, above TA = 25°C 1
Thermal Resistance, Junction-to-Ambient, FR-5 Board RΘJA 556 ℃/W FR-5 board 1
Total Device Dissipation, Alumina Substrate PD 300 mW Alumina substrate (Note 2), TA = 25°C 1
Derate above 25°C, Alumina Substrate 2.4 mW/℃ Alumina substrate, above TA = 25°C 1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate RΘJA 417 ℃/W Alumina substrate 1
Collector-Emitter Breakdown Voltage V(BR)CEO -150 V IC = -1.0 mA, IB = 0 2
Collector-Base Breakdown Voltage V(BR)CBO -160 V IC = -100 µA, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -10 µA, IC = 0 2
Collector Cutoff Current ICBO -50 nA VCB = -120 V, IE = 0 2
Collector Cutoff Current (TA=100°C) ICBO -50 µA VCB = -120 V, IE = 0, TA = 100℃ 2
Emitter-Base Cut-off Current IEBO -50 nA IC = 0, VEB = -5.0 V 2
Collector-Emitter Cutoff Current ICEO -10 μA VCE = -150 V, IB = 0 2
DC Current Gain HFE 50 IC = -1.0 mA, VCE = -5.0 V 2
DC Current Gain HFE 60 240 IC = -10 mA, VCE = -5.0 V 2
Collector-Emitter Saturation Voltage VCE(S) -0.2 V IC = -10 mA, IB = -1.0 mA 2
Collector-Emitter Saturation Voltage VCE(S) -0.5 V IC = -50 mA, IB = -5.0 mA 2
Base-Emitter Saturation Voltage VBE(S) -1 V IC = -10 mA, IB = -1.0 mA 2
Current-Gain Bandwidth Product fT 100 300 MHz IC = -10 mA, VCE = -10 V, f = 100 MHz 2
Output Capacitance Cobo 6 pF VCB = -10 V, IE = 0, f = 1.0 MHz 2
Small-Signal Current Gain hfe 40 200 IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz 2
Noise Figure NF 8 dB IC = -200 µA, VCE = -5.0 V, Rs = 10 Ω, f = 1.0 kHz 2

CAD (KiCad official)

  • Symbol: S-LMBT5401LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s-lmbt5401lt1g-etched.step / s-lmbt5401lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lmbt5401lt1g.step / s-lmbt5401lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (5 pp, sha256 0953077d2912da75, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF