component
S-LMBT2907ALT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownS-LMBT2907ALT1G
LRC · Bipolar (BJT) · SOT-23
S-LMBT2907ALT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, the control input; the datasheet gives no separate pin-level limit, so the device maximum ratings apply (emitter-base voltage VEBO -5.0 Vdc). |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the absolute maximum emitter-base voltage is -5.0 Vdc. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; maximum collector-emitter voltage is -40 Vdc (LMBT2907) or -60 Vdc (LMBT2907A) and continuous collector current is -600 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (2907A) | V(BR)CEO | -60 | Vdc | IC = -10 mAdc, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -60 | Vdc | IC = -10 µAdc, IE = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | Vdc | IE = -10 µAdc, IC = 0 | 2 | ||
| Collector Cutoff Current | ICEX | -50 | nAdc | VCB = -30Vdc, IBE(OFF) = -0.5Vdc | 2 | ||
| Collector Cutoff Current (2907A) | ICBO | -0.01 | µAdc | VCB = -50Vdc, IE = 0 | 2 | ||
| Collector Cutoff Current (2907A, high temperature) | ICBO | -10 | µAdc | VCB = -50Vdc, IE = 0, TA = 125°C | 2 | ||
| Base Current | IB | -50 | nAdc | VCE = -30Vdc, VEB(off) = -0.5Vdc | 2 | ||
| DC Current Gain (2907A) | hFE | 75 | IC = -0.1 mAdc, VCE = -10 Vdc | 2 | |||
| DC Current Gain (2907A) | hFE | 100 | IC = -1.0 mAdc, VCE = -10 Vdc | 2 | |||
| DC Current Gain (2907A) | hFE | 100 | 300 | IC = -150 mAdc, VCE = -10 Vdc | 2 | ||
| DC Current Gain (2907A) | hFE | 50 | IC = -500 mAdc, VCE = -10 Vdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.4 | Vdc | IC = -150 mAdc, IB = -15 mAdc | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -1.6 | Vdc | IC = -500 mAdc, IB = -50 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -1.3 | Vdc | IC = -150 mAdc, IB = -15 mAdc | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -2.6 | Vdc | IC = -500 mAdc, IB = -50 mAdc | 2 | ||
| Current-Gain, Bandwidth Product | fT | 200 | MHz | IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz | 3 | ||
| Output Capacitance | Cobo | 8 | pF | VCB = -10 Vdc, IE = 0, f = 1.0 MHz | 3 | ||
| Input Capacitance | Cibo | 30 | pF | VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz | 3 | ||
| Turn-On Time | ton | 45 | ns | VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc | 3 | ||
| Delay Time | td | 10 | ns | VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc | 3 | ||
| Rise Time | tr | 40 | ns | VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc | 3 | ||
| Fall Time | tf | 60 | ns | VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = 15 mAdc | 3 | ||
| Turn-Off Time | toff | 280 | ns | VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = 15 mAdc | 3 | ||
| Collector-Emitter Voltage | VCEO | -60 | Vdc | 2907A column | 1 | ||
| Collector-Base Voltage | VCBO | -60 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | Vdc | 1 | |||
| Collector Current, Continuous | IC | -600 | mAdc | 1 | |||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | FR-5 board, TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (FR-5 Board) | RθJA | 556 | °C/W | FR-5 board | 1 | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | Alumina substrate, TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient (Alumina Substrate) | RθJA | 417 | °C/W | Alumina substrate | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
S-LMBT2907ALT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
s-lmbt2907alt1g-etched.step/s-lmbt2907alt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s-lmbt2907alt1g.step/s-lmbt2907alt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (7 pp, sha256
972edeefd64f88f2, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).