component
S-LMBT2222ALT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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S-LMBT2222ALT1G
LRC · Bipolar (BJT) · SOT-23
S-LMBT2222ALT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN general-purpose transistor; the device absolute maximum ratings apply, including emitter-base voltage VEBO 6 V and continuous collector current IC 600 mA. |
| 2 | EMITTER | passive | Emitter terminal of the NPN general-purpose transistor; the device absolute maximum ratings apply, including collector-emitter voltage VCEO 40 V. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN general-purpose transistor; the device absolute maximum ratings apply, including collector-base voltage VCBO 75 V and continuous collector current IC 600 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | VBR(CEO) | 40 | V | IC = 10 mA, IB = 0 | 2 | ||
| Collector-Base Breakdown Voltage | VBR(CBO) | 75 | V | IC = 10 μA, IE = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | VBR(EBO) | 6 | V | IE = 10 μA, IC = 0 | 2 | ||
| Collector Cutoff Current | ICEX | 10 | nA | VCE = 60 V, VEB(off) = 3.0 V | 2 | ||
| Collector Cutoff Current | ICBO | 0.01 | μA | VCB = 60 V, IE = 0 | 2 | ||
| Collector Cutoff Current | ICBO | 10 | μA | VCB = 60 V, IE = 0, TA = 125°C | 2 | ||
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 3.0 V, IC = 0 | 2 | ||
| Base Cutoff Current | IBL | 20 | nA | VCE = 60 V, VEB(off) = 3.0 V | 2 | ||
| Collector-Emitter cutoff Current | ICEO | 10 | μA | VCE = 40 V, IB = 0 | 2 | ||
| DC Current Gain | HFE | 35 | IC = 0.1 mA, VCE = 10 V | 2 | |||
| DC Current Gain | HFE | 50 | IC = 1.0 mA, VCE = 10 V | 2 | |||
| DC Current Gain | HFE | 75 | IC = 10 mA, VCE = 10 V | 2 | |||
| DC Current Gain | HFE | 100 | 300 | IC = 150 mA, VCE = 10 V | 2 | ||
| DC Current Gain | HFE | 40 | IC = 500 mA, VCE = 10 V | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3 | V | IC = 150 mA, IB = 15 mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 1 | V | IC = 500 mA, IB = 50 mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.6 | 1.2 | V | IC = 150 mA, IB = 15 mA | 2 | |
| Base-Emitter Saturation Voltage | VBE(sat) | 2 | V | IC = 500 mA, IB = 50 mA | 2 | ||
| Current-Gain, Bandwidth Product | fT | 300 | MHz | IC = 20 mA, VCE = 20 V, f = 100 MHz | 2 | ||
| Output Capacitance | Cobo | 8 | pF | VCB = 5.0 V, IE = 0, f = 1.0 MHz | 2 | ||
| Input Capacitance | Cibo | 25 | pF | VEB = 0.5 V, IC = 0, f = 1.0 MHz | 2 | ||
| Delay Time | td | 10 | ns | VCC = 30 V, VEB = -0.5 V, IC = 150 mA, IB1 = 15 mA | 3 | ||
| Rise Time | tr | 25 | ns | VCC = 30 V, VEB = -0.5 V, IC = 150 mA, IB1 = 15 mA | 3 | ||
| Storage Time | ts | 225 | ns | VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA | 3 | ||
| Fall Time | tf | 60 | ns | VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA | 3 | ||
| Collector-Emitter Voltage | VCEO | 40 | V | Ta = 25ºC | 1 | ||
| Collector-Base Voltage | VCBO | 75 | V | Ta = 25ºC | 1 | ||
| Emitter-Base Voltage | VEBO | 6 | V | Ta = 25ºC | 1 | ||
| Collector Current, Continuous | IC | 600 | mA | Ta = 25ºC | 1 | ||
| Junction and Storage temperature | TJ,Tstg | -55 | 150 | ºC | 1 | ||
| Total Device Dissipation | PD | 225 | mW | FR-5 Board (Note 1) @ TA = 25ºC | 1 | ||
| Derate above 25ºC | 1.8 | mW/ºC | Derate above 25ºC | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RΘJA | 556 | ºC/W | FR-5 Board (Note 1) | 1 | ||
| Thermal Resistance, Junction-to-Case | RΘJC | 300 | ºC/W | 1 |
CAD (KiCad official)
- Symbol:
S-LMBT2222ALT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
s-lmbt2222alt1g-etched.step/s-lmbt2222alt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s-lmbt2222alt1g.step/s-lmbt2222alt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
f8c7d601144bd49e, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# S-LMBT2222ALT1G
**LRC** · Bipolar (BJT) · SOT-23
S-LMBT2222ALT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN general-purpose transistor; the device absolute maximum ratings apply, including emitter-base voltage VEBO 6 V and continuous collector current IC 600 mA. |
| 2 | EMITTER | passive | Emitter terminal of the NPN general-purpose transistor; the device absolute maximum ratings apply, including collector-emitter voltage VCEO 40 V. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN general-purpose transistor; the device absolute maximum ratings apply, including collector-base voltage VCBO 75 V and continuous collector current IC 600 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | VBR(CEO) | 40 | | | V | IC = 10 mA, IB = 0 | 2 |
| Collector-Base Breakdown Voltage | VBR(CBO) | 75 | | | V | IC = 10 μA, IE = 0 | 2 |
| Emitter-Base Breakdown Voltage | VBR(EBO) | 6 | | | V | IE = 10 μA, IC = 0 | 2 |
| Collector Cutoff Current | ICEX | | | 10 | nA | VCE = 60 V, VEB(off) = 3.0 V | 2 |
| Collector Cutoff Current | ICBO | | | 0.01 | μA | VCB = 60 V, IE = 0 | 2 |
| Collector Cutoff Current | ICBO | | | 10 | μA | VCB = 60 V, IE = 0, TA = 125°C | 2 |
| Emitter Cutoff Current | IEBO | | | 100 | nA | VEB = 3.0 V, IC = 0 | 2 |
| Base Cutoff Current | IBL | | | 20 | nA | VCE = 60 V, VEB(off) = 3.0 V | 2 |
| Collector-Emitter cutoff Current | ICEO | | | 10 | μA | VCE = 40 V, IB = 0 | 2 |
| DC Current Gain | HFE | 35 | | | | IC = 0.1 mA, VCE = 10 V | 2 |
| DC Current Gain | HFE | 50 | | | | IC = 1.0 mA, VCE = 10 V | 2 |
| DC Current Gain | HFE | 75 | | | | IC = 10 mA, VCE = 10 V | 2 |
| DC Current Gain | HFE | 100 | | 300 | | IC = 150 mA, VCE = 10 V | 2 |
| DC Current Gain | HFE | 40 | | | | IC = 500 mA, VCE = 10 V | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.3 | V | IC = 150 mA, IB = 15 mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 1 | V | IC = 500 mA, IB = 50 mA | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.6 | | 1.2 | V | IC = 150 mA, IB = 15 mA | 2 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | 2 | V | IC = 500 mA, IB = 50 mA | 2 |
| Current-Gain, Bandwidth Product | fT | 300 | | | MHz | IC = 20 mA, VCE = 20 V, f = 100 MHz | 2 |
| Output Capacitance | Cobo | | | 8 | pF | VCB = 5.0 V, IE = 0, f = 1.0 MHz | 2 |
| Input Capacitance | Cibo | | | 25 | pF | VEB = 0.5 V, IC = 0, f = 1.0 MHz | 2 |
| Delay Time | td | | | 10 | ns | VCC = 30 V, VEB = -0.5 V, IC = 150 mA, IB1 = 15 mA | 3 |
| Rise Time | tr | | | 25 | ns | VCC = 30 V, VEB = -0.5 V, IC = 150 mA, IB1 = 15 mA | 3 |
| Storage Time | ts | | | 225 | ns | VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA | 3 |
| Fall Time | tf | | | 60 | ns | VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA | 3 |
| Collector-Emitter Voltage | VCEO | | | 40 | V | Ta = 25ºC | 1 |
| Collector-Base Voltage | VCBO | | | 75 | V | Ta = 25ºC | 1 |
| Emitter-Base Voltage | VEBO | | | 6 | V | Ta = 25ºC | 1 |
| Collector Current, Continuous | IC | | | 600 | mA | Ta = 25ºC | 1 |
| Junction and Storage temperature | TJ,Tstg | -55 | | 150 | ºC | | 1 |
| Total Device Dissipation | PD | | | 225 | mW | FR-5 Board (Note 1) @ TA = 25ºC | 1 |
| Derate above 25ºC | | | 1.8 | | mW/ºC | Derate above 25ºC | 1 |
| Thermal Resistance, Junction-to-Ambient | RΘJA | | 556 | | ºC/W | FR-5 Board (Note 1) | 1 |
| Thermal Resistance, Junction-to-Case | RΘJC | | 300 | | ºC/W | | 1 |
## CAD (KiCad official)
- Symbol: `S-LMBT2222ALT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `s-lmbt2222alt1g-etched.step` / `s-lmbt2222alt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `s-lmbt2222alt1g.step` / `s-lmbt2222alt1g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LRC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603101997256093696) (6 pp, sha256 `f8c7d601144bd49e`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/s-lmbt2222alt1g-datasheet.pdf)