component

S-LBTN180Y3T1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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S-LBTN180Y3T1G

LRC · Bipolar (BJT) · SOT-89

S-LBTN180Y3T1G from LRC, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; base current IB is rated 0.3 A (peak 0.3 A for tp≤1 ms) and VEBO is 5 V max.
2 C passive Collector of the NPN transistor; VCEO 80 V, VCBO 100 V, IC 1 A (ICM 2 A for tp≤1 ms).
3 E passive Emitter of the NPN transistor (arrow pin in the symbol); VEBO 5 V max relative to base.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Current IC 1 A 1
Collector-Base Voltage VCBO 100 V 1
Collector-Emitter Voltage VCEO 80 V 1
Emitter-Base Voltage VEBO 5 V 1
Peak collector current ICM 2 A tp≤1 ms 1
Base current IB 0.3 A 1
Peak base current IBM 0.3 A tp≤1 ms 1
Total Device Dissipation, FR-4 Board PD 550 mW TA = 25ºC, FR-4 board (Note 1) 1
Junction and Storage temperature TJ,Tstg -65 150 ºC 1
Thermal Resistance, Junction-to-Ambient RΘJA 225 ºC/W FR-4 board (Note 1) 1
Thermal Resistance, Junction-to-Case RΘJC 50 ºC/W 1
Total Device Dissipation derating PD 4.4 mW/ºC Derate above 25ºC 1
Collector Cutoff Current ICBO 100 nA VCB = 30 V, IE = 0 A 2
Emitter Cut-off Current IEBO 100 nA VEB = 5 V, IC = 0 2
Collector-Emitter cutoff Current ICEO 10 µA VCE = 80 V, IB = 0 2
Collector-Base Breakdown Voltage VBR(CBO) 100 V IC = 100 µA, IE = 0 2
Collector-Emitter Breakdown Voltage VBR(CEO) 80 V IC = 1 mA, IB = 0 2
Emitter-Base Breakdown Voltage VBR(EBO) 5 V IE = 100 µA, IC = 0 2
DC Current Gain HFE 100 250 VCE = 2 V, IC = 150 mA 2
DC Current Gain HFE 45 VCE = 2 V, IC = 500 mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC = 500 mA, IB = 50 mA 2
Base-Emitter voltage VBE 1 V VCE = 2 V, IC = 500 mA 2
Transition Frequency fT 100 180 MHz VCE = 5 V, IC = 50 mA, f = 100 MHz 2
Collector Capacitance Cc 6 pF VCB = 10 V, IE = ie = 0 A, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: S-LBTN180Y3T1G
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: s-lbtn180y3t1g-etched.step / s-lbtn180y3t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lbtn180y3t1g.step / s-lbtn180y3t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 0900edec1cccc9ac, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF