component
S-LBSS5250Y3T1G
Public Made by Adomby adom
LRC Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 15d ago |
| viewers | 15d ago |
| package.json | 15d ago |
| page.json | 15d ago |
| README.md | 15d ago |
| s-lbss5250y3t1g-etched.glb | 15d ago |
| s-lbss5250y3t1g-etched.step | 15d ago |
| s-lbss5250y3t1g-hero.glb | 15d ago |
| s-lbss5250y3t1g-hero.overlay.json | 15d ago |
| s-lbss5250y3t1g.glb | 15d ago |
| s-lbss5250y3t1g.kicad_mod | 15d ago |
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| s-lbss5250y3t1g.lbr | 15d ago |
| s-lbss5250y3t1g.step | 15d ago |
S-LBSS5250Y3T1G
LRC · Bipolar Transistors - BJT · SOT-89
S-LBSS5250Y3T1G from LRC, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet rates emitter-base voltage VEBO at -6 V. |
| 2 | C | passive | Collector of the PNP transistor; rated VCEO -50 V, VCBO -50 V, IC -2 A continuous and ICP -4 A pulsed. |
| 3 | E | passive | Emitter of the PNP transistor, shown with the arrow pointing toward the base in the schematic symbol. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-89 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | BVCEO | -50 | V | IC = -1mA | 2 | ||
| Collector-base breakdown voltage | BVCBO | -50 | V | IC = -100μA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | -6 | V | IE = -100μA | 2 | ||
| Collector Cutoff Current | ICBO | -1 | µA | VCB = -50V, IE = 0 | 2 | ||
| Emitter Cut-off Current | IEBO | -1 | µA | VEB = -4V, IC = 0 | 2 | ||
| DC Current Gain | HFE | 180 | 450 | VCE = -2V, IC = -50mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -200 | -400 | mV | IC = -700mA, IB = -35mA | 2 | |
| Transition Frequency | fT | 320 | MHz | VCE = -10V, IE = 300mA, f = 100MHz | 2 | ||
| Collector Output Capacitance | Cob | 22 | pF | VCB = -10V, IE = 0A, f = 1MHz | 2 | ||
| Collector-Base Voltage | VCBO | -50 | V | Ta = 25ºC | 1 | ||
| Collector-Emitter Voltage | VCEO | -50 | V | Ta = 25ºC | 1 | ||
| Emitter-Base Voltage | VEBO | -6 | V | Ta = 25ºC | 1 | ||
| Collector Current | IC | -2 | A | Ta = 25ºC | 1 | ||
| Collector Current (Pulse) | ICP | -4 | A | Ta = 25ºC | 1 | ||
| Junction and Storage temperature | TJ,Tstg | -55 | 150 | ºC | 1 | ||
| Total Device Dissipation | PD | 550 | mW | FR-4 Board (Note 1) @ TA = 25ºC | 1 | ||
| Derate above 25ºC | PD | 4.4 | mW/ºC | FR-4 Board (Note 1) | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RΘJA | 225 | ºC/W | FR-4 Board (Note 1) | 1 |
CAD (KiCad official)
- Symbol:
S-LBSS5250Y3T1G - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
s-lbss5250y3t1g-etched.step/s-lbss5250y3t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s-lbss5250y3t1g.step/s-lbss5250y3t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
b6e4447e2b613740, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).