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S-LBSS5240LT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S-LBSS5240LT1G

LRC · Bipolar (BJT) · SOT-23

S-LBSS5240LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP low-VCE(sat) transistor; VBE(on) is specified at -0.75 V max with VCE = -2 V and IC = -100 mA.
2 EMITTER passive Emitter terminal of the PNP transistor, rated for VEBO of -5.0 V and VCEO of -40 V with continuous collector current up to -2 A.
3 COLLECTOR passive Collector terminal of the PNP transistor, rated for VCBO of -40 V and continuous collector current of -2 A, with power dissipation of 0.3 W.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base cut-off current ICBO -100 nA VCB = −30 V; IE = 0 2
Emitter-base cut-off current IEBO -100 nA VBE = −4 V; IC = 0 2
DC current gain hFE 300 VCE = −2 V; IC = −100 mA 2
DC current gain hFE 260 VCE = −2 V; IC = −500 mA 2
DC current gain hFE 210 VCE = −2 V; IC = −1 A 2
DC current gain hFE 100 VCE = −2 V; IC = −2 A 2
Collector-emitter saturation voltage VCEsat -100 mV IC = −100 mA; IB = −1 mA 2
Collector-emitter saturation voltage VCEsat -110 mV IC = −500 mA; IB = −50 mA 2
Collector-emitter saturation voltage VCEsat -225 mV IC = −750 mA; IB = −15 mA 2
Collector-emitter saturation voltage VCEsat -350 mV IC = −2 A; IB = −200 mA 2
Base-emitter turn-on voltage VBE(on) -0.75 V VCE = −2 V; IC = −100 mA 2
Base-emitter saturation voltage VBEsat -1.1 V IC = −2 A; IB = −200 mA 2
Transition frequency fT 100 MHz IC = −100 mA; VCE = −10 V; f = 100 MHz 2
Collector capacitance Cc 28 pF VCB = −10 V; IE = Ie = 0; f = 1 MHz 2
Collector-emitter voltage VCEO -40 V 1
Collector-base voltage VCBO -40 V 1
Emitter-base voltage VEBO -5 V 1
Collector current - continuous IC -2 A 1
Power dissipation PD 0.3 W 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -65 150 °C 1
Thermal resistance, junction to ambient Rth(j-a) 417 K/W in free air; standard footprint PCB (note 1) 1
Thermal resistance, junction to ambient Rth(j-a) 260 K/W in free air; PCB with mounted collector pad 1 cm2 (note 2) 1

CAD (KiCad official)

  • Symbol: S-LBSS5240LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s-lbss5240lt1g-etched.step / s-lbss5240lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lbss5240lt1g.step / s-lbss5240lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (5 pp, sha256 61468430b9853513, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF