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S-LBSS4240LT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S-LBSS4240LT1G

LRC · Bipolar (BJT) · SOT-23

S-LBSS4240LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base of the NPN transistor; VEBO maximum is 5 V and VBE(on) is at most 0.75 V at IC = 100 mA, VCE = 2 V.
2 EMITTER passive Emitter of the NPN transistor; continuous collector current through the device is rated at 2 A.
3 COLLECTOR passive Collector of the NPN transistor; VCEO and VCBO are rated at 40 V and continuous IC at 2 A.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO 40 V Ta = 25ºC 1
Collector-Base voltage VCBO 40 V Ta = 25ºC 1
Emitter-Base Voltage VEBO 5 V Ta = 25ºC 1
Collector current-continuous IC 2 A Ta = 25ºC 1
Total power dissipation PD 0.3 W Ta = 25ºC 1
Junction temperature TJ 150 ℃ Ta = 25ºC 1
Storage temperature TSTG -55 150 ℃ 1
Thermal resistance from junction to ambient in free air RθJA 417 ºC/W (Note 1) 1
Thermal resistance from junction to ambient in free air RθJA 260 ºC/W (Note 2) 1
Thermal resistance from junction to case RθJC 150 ºC/W (Note 1) 1
Emitter-Base cut-off current IEBO 100 nA IC = 0, VEB = 4 V 2
DC current gain hFE 350 IC = 100 mA, VCE = 2 V 2
DC current gain hFE 300 IC = 500 mA, VCE = 2 V 2
DC current gain hFE 150 IC = 2 A, VCE = 2 V 2
Collector-Emitter saturation voltage VCE(sat) 70 mV IC = 100 mA, IB = 1 mA 2
Collector-Emitter saturation voltage VCE(sat) 100 mV IC = 500 mA, IB = 50 mA 2
Collector-Emitter saturation voltage VCE(sat) 180 mV IC = 750 mA, IB = 15 mA 2
Collector-Emitter saturation voltage VCE(sat) 320 mV IC = 2 A, IB = 200 mA (Note 3) 2
Base-Emitter turn on voltage VBE(on) 0.75 V IC = 100 mA, VCE = 2 V 2
Base-Emitter saturation voltage VBE(sat) 1.1 V IC = 2 A, IB = 200 mA (Note 3) 2
Transition frequency fT 100 MHz IC = 100 mA, VCE = 10 V, f = 100 MHz 2
Collector capacitance Cc 20 pF IE = Ie = 0, VCB = 10 V, f = 1 MHz 2
Collector-Emitter cutoff current ICEO 1 µA IB = 0, VCE = 40 V 2
Collector-Base Breakdown Voltage VBR(CBO) 40 V IC = 100 μA, IE = 0 2
Emitter-Base Breakdown Voltage VBR(EBO) 5 V IE = 100 μA, IC = 0 2
Collector-Emitter Breakdown Voltage VBR(CEO) 40 V IC = 10 mA, IB = 0 2

CAD (KiCad official)

  • Symbol: S-LBSS4240LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s-lbss4240lt1g-etched.step / s-lbss4240lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lbss4240lt1g.step / s-lbss4240lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (5 pp, sha256 b57eff77db004c67, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF