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S-LBC856BLT1G

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LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S-LBC856BLT1G

LRC · Bipolar (BJT) · SOT-23

S-LBC856BLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor; the datasheet's emitter-base voltage limit is VEBO -5 V.
2 EMITTER passive Emitter terminal of the PNP transistor; emitter-base breakdown voltage VBR(EBO) is -5 V minimum at IE = -1.0 µA.
3 COLLECTOR passive Collector terminal of the PNP transistor; the datasheet limits are continuous collector current -100 mA and collector-emitter voltage VCEO -65 V.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage VBR(CEO) -65 V IC = -10 mA, IB = 0 2
Collector-Emitter Breakdown Voltage VBR(CES) -80 V IC = -10 µA, VEB = 0 2
Collector-Base Breakdown Voltage VBR(CBO) -80 V IC = -10 µA, IE = 0 2
Emitter-Base Breakdown Voltage VBR(EBO) -5 V IE = -1.0 µA, IC = 0 2
Collector Cutoff Current ICBO -15 nA VCB = -30 V 2
Collector Cutoff Current ICBO -4 µA VCB = -30 V, TA = 150°C 2
Emitter-Base cut-off current IEBO -100 nA VBE = -5 V, IC = 0 2
Collector-Emitter cutoff Current ICEO -10 µA VCE = -65 V, IB = 0 2
DC Current Gain HFE 220 290 475 IC = -2.0 mA, VCE = -5.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -10 mA, IB = -0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.7 -0.9 V IC = -10 mA, IB = -0.5 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.9 -1.1 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter on Voltage VBE(on) -0.6 -0.75 V IC = -2.0 mA, VCE = -5.0 V 2
Base-Emitter on Voltage VBE(on) -0.82 V IC = -10 mA, VCE = -5.0 V 2
Current-Gain, Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 V, f = 100 MHz 2
Output Capacitance Cobo 4.5 pF VCB = -10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = -0.2 mA, VCE = -5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 2
Collector-Emitter Voltage VCEO -65 V Ta = 25ºC 1
Collector-Base Voltage VCBO -80 V Ta = 25ºC 1
Emitter-Base Voltage VEBO -5 V Ta = 25ºC 1
Collector Current, Continuous IC -100 mA Ta = 25ºC 1
Junction and Storage Temperature TJ,Tstg -55 150 ºC 1
Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC PD 225 mW FR−5 board, TA = 25ºC (Note 1: FR-5 = 1.0×0.75×0.062 in.) 1
Derate above 25ºC 1.8 mW/ºC Derate above 25ºC 1
Thermal Resistance, Junction-to-Ambient RΘJA 556 ºC/W FR−5 board (Note 1) 1

CAD (KiCad official)

  • Symbol: S-LBC856BLT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s-lbc856blt1g-etched.step / s-lbc856blt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lbc856blt1g.step / s-lbc856blt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 7aa120cd918690d0, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF