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S-LBC856BDW1T1G

Public Made by Adom

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LRC Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S-LBC856BDW1T1G

LRC · Bipolar (BJT) · SOT-363

S-LBC856BDW1T1G from LRC, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of PNP transistor Q2 (schematic top right); Q2 is rated VCEO -65 V, IC -100 mA continuous.
2 B2 passive Base of PNP transistor Q2; Q2 is rated VEBO -5 V.
3 C1 passive Collector of PNP transistor Q1 (schematic top left); rated VCEO -65 V, VCBO -80 V, IC -100 mA continuous.
4 E1 passive Emitter of PNP transistor Q1 (schematic bottom left); Q1 is rated VEBO -5 V.
5 B1 passive Base of PNP transistor Q1; Q1 is rated VEBO -5 V.
6 C2 passive Collector of PNP transistor Q2 (schematic bottom right); rated VCEO -65 V, VCBO -80 V, IC -100 mA continuous.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -80 V Ta = 25°C 1
Collector-Emitter Voltage VCEO -65 V Ta = 25°C 1
Emitter-Base Voltage VEBO -5 V Ta = 25°C 1
Collector Current (Continuous) IC -100 mA Ta = 25°C 1
Junction and Storage Temperature TJ,Tstg -55 150 ºC 1
Total Device Dissipation PD 250 mW FR-4 board (Note 1) 1
Thermal Resistance, Junction to Ambient RθJA 500 ºC/W FR-4 board (Note 1) 1
Collector-Emitter Breakdown Voltage V(BR)CES -80 V IC = -10 µA, VEB = 0 2
Collector-Emitter Breakdown Voltage V(BR)CEO -65 V IC = -10 mA 2
Collector-Base Breakdown Voltage V(BR)CBO -80 V IC = -10 µA 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -1.0 µA 2
Collector Cutoff Current ICBO -15 µA VCB = -30 V 2
Collector Cutoff Current ICBO -4 nA VCB = -30 V, TA = 150°C 2
DC Current Gain hFE 220 290 475 IC = -2.0 mA, VCE = -5.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -10 mA, IB = -0.5 mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.65 V IC = -100 mA, IB = -5.0 mA 2
Base-Emitter Voltage (on) VBE(on) -0.6 -0.75 V IC = -2.0 mA, VCE = -5.0 V 2
Base-Emitter Voltage (on) VBE(on) -0.82 V IC = -10 mA, VCE = -5.0 V 2
Current-Gain, Bandwidth Product fT 100 MHz IC = -10 mA, VCE = -5.0 V, f = 100 MHz 2
Output Capacitance Cobo 4.5 pF VCB = -10 V, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = -0.2 mA, VCE = -5.0 V, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 2
Base-Emitter Saturation Voltage VBE(sat) -0.7 V IC = -10 mA, IB = -0.5 mA 2
Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC = -100 mA, IB = -5.0 mA 2
Power Dissipation Derating PD 2 mW/ºC Derate above 25°C 1

CAD (KiCad official)

  • Symbol: S-LBC856BDW1T1G
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: s-lbc856bdw1t1g-etched.step / s-lbc856bdw1t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lbc856bdw1t1g.step / s-lbc856bdw1t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (6 pp, sha256 e07e5baab3435436, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF