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S-LBC817-16LT1G

Public Made by Adom

by adom

LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S-LBC817-16LT1G

LRC · Bipolar (BJT) · SOT-23

S-LBC817-16LT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN general-purpose transistor, which controls the device; the datasheet gives no separate base current limit for this pin.
2 EMITTER passive Emitter terminal of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is at least 5.0 V and the absolute maximum emitter-base voltage VEBO is 5.0 V.
3 COLLECTOR passive Collector terminal of the NPN transistor, rated for a continuous collector current of 500 mA with VCEO 45 V and VCBO 50 V maximum.

Key specifications

Parameter Value
Manufacturer LRC
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO 45 V IC = 10 mA 1
Collector-Emitter Breakdown Voltage V(BR)CES 50 V VEB = 0, IC = 10 µA 1
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 1.0 µA 1
Collector Cutoff Current ICBO 100 nA VCB = 20 V 1
Collector Cutoff Current ICBO 5 µA VCB = 20 V, TA = 150°C 1
DC Current Gain (LBC817-16) hFE 100 250 IC = 100 mA, VCE = 1.0 V 2
DC Current Gain hFE 40 IC = 500 mA, VCE = 1.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) 0.7 V IC = 500 mA, IB = 50 mA 2
Base-Emitter On Voltage VBE(on) 1.2 V IC = 500 mA, VCE = 1.0 V 2
Current-Gain, Bandwidth Product fT 100 MHz IC = 10 mA, VCE = 5.0 V dc, f = 100 MHz 2
Collector-Emitter Voltage VCEO 45 V 1
Collector-Base Voltage VCBO 50 V 1
Emitter-Base Voltage VEBO 5 V 1
Collector Current, Continuous IC 500 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation PD 225 mW FR-5 board, TA = 25°C 1
Thermal Resistance, Junction to Ambient RθJA 556 °C/W FR-5 board 1
Total Device Dissipation PD 300 mW Alumina substrate, TA = 25°C 1
Thermal Resistance, Junction to Ambient RθJA 417 °C/W Alumina substrate 1

CAD (KiCad official)

  • Symbol: S-LBC817-16LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s-lbc817-16lt1g-etched.step / s-lbc817-16lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s-lbc817-16lt1g.step / s-lbc817-16lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LRC datasheet (10 pp, sha256 1c7839f240f61f86, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF