component
S-L8550HQLT1G
Public Made by Adomby adom
LRC Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| s-l8550hqlt1g-etched.glb | 17d ago |
| s-l8550hqlt1g-etched.step | 17d ago |
| s-l8550hqlt1g-hero.glb | 17d ago |
| s-l8550hqlt1g-hero.overlay.json | 17d ago |
| s-l8550hqlt1g.glb | 17d ago |
| s-l8550hqlt1g.kicad_mod | 17d ago |
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| s-l8550hqlt1g.step | 17d ago |
S-L8550HQLT1G
LRC · Bipolar (BJT) · SOT-23
S-L8550HQLT1G from LRC, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet rates emitter-base voltage VEBO at -5 V, and emitter-base breakdown V(BR)EBO is -5 V minimum at IE = -100 µA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the datasheet rates collector-emitter voltage VCEO at -25 V and collector current IC at -1500 mA. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; the datasheet gives collector-base breakdown V(BR)CBO of -40 V minimum and collector-emitter saturation VCE(sat) of -0.5 V maximum at IC = -800 mA, IB = -80 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LRC |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -25 | V | IC =-1.0mA | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE = -100µA | 2 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 | V | IC = -100µA | 2 | ||
| Collector Cutoff Current | ICBO | -150 | nA | VCB = -35 V | 2 | ||
| Emitter Cutoff Current | IEBO | -150 | nA | VEB = -4V | 2 | ||
| Collector-Emitter cutoff Current | ICEO | -10 | μA | VCE -25V, IB=0 | 2 | ||
| DC Current Gain | HFE | 150 | 300 | IC =-100mA, VCE =-1V | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(S) | -0.5 | V | IC =-800mA, IB =-80mA | 2 | ||
| Collector-Emitter Voltage | VCEO | -25 | V | Ta = 25ºC | 1 | ||
| Emitter-Base Voltage | VEBO | -5 | V | Ta = 25ºC | 1 | ||
| Collector Current | IC | -1500 | mA | Ta = 25ºC | 1 | ||
| Total Device Dissipation FR-5 Board | PD | 225 | mW | FR-5 Board (Note 1) @ TA = 25ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RΘJA | 556 | ℃/W | FR-5 Board (Note 1) | 1 | ||
| Total Device Dissipation Alumina Substrate | PD | 300 | mW | Alumina Substrate (Note 2) @ TA = 25ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RΘJA | 417 | ℃/W | Alumina Substrate (Note 2) | 1 | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
S-L8550HQLT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
s-l8550hqlt1g-etched.step/s-l8550hqlt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s-l8550hqlt1g.step/s-l8550hqlt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LRC datasheet (6 pp, sha256
e17f572b60c5ce23, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).