component

RZM002P02T2L

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 25d ago
viewers rzm002p02t2l: viewers · Ray 25d ago
package.json rzm002p02t2l: etched from the flattened plain STEP (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
page.json rzm002p02t2l: etched from the flattened plain STEP (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
README.md rzm002p02t2l: specified limits as data (metadata.characteristics, 23 rows from the datasheet) · Ray 19d ago
rzm002p02t2l-etched.glb rzm002p02t2l: etched from the flattened plain STEP (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
rzm002p02t2l-etched.step rzm002p02t2l: etched from the flattened plain STEP (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
rzm002p02t2l-hero.glb rzm002p02t2l: etched from the flattened plain STEP (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
rzm002p02t2l-hero.overlay.json rzm002p02t2l: etched from the flattened plain STEP (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
rzm002p02t2l.glb plain STEP: one free product with face colours (generated model was nested; tscircuit read it white) · Ray 17d ago
rzm002p02t2l.kicad_mod Publish 0.1.0 · Ray 25d ago
rzm002p02t2l.kicad_sym Publish 0.1.0 · Ray 25d ago
rzm002p02t2l.lbr Publish 0.1.0 · Ray 25d ago
rzm002p02t2l.step plain STEP: one free product with face colours (generated model was nested; tscircuit read it white) · Ray 17d ago

RZM002P02T2L

ROHM Semicon · MOSFETs · SOT-723

RZM002P02T2L from ROHM Semicon, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input; gate threshold VGS(th) = −0.3 V to −1.0 V (VDS = −10 V, ID = −100 µA); maximum VGSS = ±10 V.
2 S passive P-channel source terminal; body-diode cathode; continuous forward body-diode current IS = −100 mA max (Ta = 25 °C).
3 D passive P-channel drain terminal; VDSS = −20 V, continuous drain current ID = ±200 mA, pulsed IDP = ±800 mA (Pw ≤ 10 µs, duty ≤ 1 %); RDS(on) max 1.2 Ω at VGS = −4.5 V, ID = −200 mA.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-723
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS -20 V Ta = 25°C unless otherwise specified 1
Continuous drain current ID -200 200 mA Ta = 25°C unless otherwise specified 1
Pulsed drain current IDP -800 800 mA Pw≦10μs, Duty cycle≦1% 1
Gate - Source voltage VGSS -10 10 V Ta = 25°C unless otherwise specified 1
Power dissipation PD 150 mW Each terminal mounted on a reference land 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - ambient RthJA 833 ℃/W Each terminal mounted on a reference land 2
Drain - Source breakdown voltage V(BR)DSS -20 V VGS = 0V, ID = -1mA 2
Zero gate voltage drain current IDSS -1 μA VDS = -20V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VGS = ±10V, VDS = 0V 2
Gate threshold voltage VGS(th) -0.3 -1 V VDS = -10V, ID = -100μA 2
Static drain - source on - state resistance RDS(on) 0.8 1.2 Ω VGS = -4.5V, ID = -200mA; pulsed 2
Static drain - source on - state resistance RDS(on) 1 1.5 Ω VGS = -2.5V, ID = -100mA; pulsed 2
Static drain - source on - state resistance RDS(on) 1.3 2.2 Ω VGS = -1.8V, ID = -100mA; pulsed 2
Static drain - source on - state resistance RDS(on) 1.6 3.5 Ω VGS = -1.5V, ID = -40mA; pulsed 2
Static drain - source on - state resistance RDS(on) 2.4 9.6 Ω VGS = -1.2V, ID = -10mA; pulsed 2
Forward transfer admittance /Yfs/ 200 mS VDS = -10V, ID = -200mA; pulsed 2
Continuous forward current IS -100 mA Ta = 25℃ 3
Pulse forward current ISP -800 mA Pw≦10μs, Duty cycle≦1% 3
Forward voltage VSD -1.2 V VGS = 0V, IS = -200mA; pulsed 3
Breakdown voltage temperature coefficient ΔV(BR)DSS/ΔTj -21.9 mV/℃ ID = -1mA; referenced to 25℃ 2
Gate threshold voltage temperature coefficient ΔVGS(th)/ΔTj 2.4 mV/℃ ID = -1mA; referenced to 25℃ 2

CAD (KiCad official)

  • Symbol: RZM002P02T2L
  • Footprint: Package_TO_SOT_SMD:SOT-723
  • 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: rzm002p02t2l-etched.step / rzm002p02t2l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rzm002p02t2l.step / rzm002p02t2l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (13 pp, sha256 49cdc8e2567a458e, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-sonnet-4-6 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF