component
RZM002P02T2L
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
rzm002p02t2l: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+314−1
README.md+30@@ -21,6 +21,36 @@ RZM002P02T2L from ROHM Semicon, in a SOT-723. Pinout and pin descriptions extrac | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain - Source voltage | VDSS | -20 | | | V | Ta = 25°C unless otherwise specified | 1 |+| Continuous drain current | ID | -200 | | 200 | mA | Ta = 25°C unless otherwise specified | 1 |+| Pulsed drain current | IDP | -800 | | 800 | mA | Pw≦10μs, Duty cycle≦1% | 1 |+| Gate - Source voltage | VGSS | -10 | | 10 | V | Ta = 25°C unless otherwise specified | 1 |+| Power dissipation | PD | | | 150 | mW | Each terminal mounted on a reference land | 1 |+| Junction temperature | Tj | | | 150 | ℃ | | 1 |+| Operating junction and storage temperature range | Tstg | -55 | | 150 | ℃ | | 1 |+| Thermal resistance, junction - ambient | RthJA | | | 833 | ℃/W | Each terminal mounted on a reference land | 2 |+| Drain - Source breakdown voltage | V(BR)DSS | -20 | | | V | VGS = 0V, ID = -1mA | 2 |+| Zero gate voltage drain current | IDSS | | | -1 | μA | VDS = -20V, VGS = 0V | 2 |+| Gate - Source leakage current | IGSS | -10 | | 10 | μA | VGS = ±10V, VDS = 0V | 2 |+| Gate threshold voltage | VGS(th) | -0.3 | | -1 | V | VDS = -10V, ID = -100μA | 2 |+| Static drain - source on - state resistance | RDS(on) | | 0.8 | 1.2 | Ω | VGS = -4.5V, ID = -200mA; pulsed | 2 |+| Static drain - source on - state resistance | RDS(on) | | 1 | 1.5 | Ω | VGS = -2.5V, ID = -100mA; pulsed | 2 |+| Static drain - source on - state resistance | RDS(on) | | 1.3 | 2.2 | Ω | VGS = -1.8V, ID = -100mA; pulsed | 2 |+| Static drain - source on - state resistance | RDS(on) | | 1.6 | 3.5 | Ω | VGS = -1.5V, ID = -40mA; pulsed | 2 |+| Static drain - source on - state resistance | RDS(on) | | 2.4 | 9.6 | Ω | VGS = -1.2V, ID = -10mA; pulsed | 2 |+| Forward transfer admittance | /Yfs/ | 200 | | | mS | VDS = -10V, ID = -200mA; pulsed | 2 |+| Continuous forward current | IS | | | -100 | mA | Ta = 25℃ | 3 |+| Pulse forward current | ISP | | | -800 | mA | Pw≦10μs, Duty cycle≦1% | 3 |+| Forward voltage | VSD | | | -1.2 | V | VGS = 0V, IS = -200mA; pulsed | 3 |+| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | | -21.9 | | mV/℃ | ID = -1mA; referenced to 25℃ | 2 |+| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | | 2.4 | | mV/℃ | ID = -1mA; referenced to 25℃ | 2 |+ ## CAD (KiCad official) - Symbol: `RZM002P02T2L`
page.json+284−1@@ -150,6 +150,289 @@ "Package": "SOT-723", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "49cdc8e2567a458e",+ "rows": [+ {+ "name": "Drain - Source voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "Ta = 25°C unless otherwise specified",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": -200,+ "typ": null,+ "max": 200,+ "conditions": "Ta = 25°C unless otherwise specified",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "IDP",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": -800,+ "typ": null,+ "max": 800,+ "conditions": "Pw≦10μs, Duty cycle≦1%",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate - Source voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "Ta = 25°C unless otherwise specified",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "Each terminal mounted on a reference land",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating junction and storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 833,+ "conditions": "Each terminal mounted on a reference land",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain - Source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = -1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -20V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate - Source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "μA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VGS = ±10V, VDS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -10V, ID = -100μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static drain - source on - state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "VGS = -4.5V, ID = -200mA; pulsed",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static drain - source on - state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1,+ "max": 1.5,+ "conditions": "VGS = -2.5V, ID = -100mA; pulsed",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static drain - source on - state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.3,+ "max": 2.2,+ "conditions": "VGS = -1.8V, ID = -100mA; pulsed",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static drain - source on - state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.6,+ "max": 3.5,+ "conditions": "VGS = -1.5V, ID = -40mA; pulsed",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static drain - source on - state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 2.4,+ "max": 9.6,+ "conditions": "VGS = -1.2V, ID = -10mA; pulsed",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward transfer admittance",+ "symbol": "|Yfs|",+ "kind": "electrical",+ "unit": "mS",+ "min": 200,+ "typ": null,+ "max": null,+ "conditions": "VDS = -10V, ID = -200mA; pulsed",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous forward current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "Ta = 25℃",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Pulse forward current",+ "symbol": "ISP",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": -800,+ "conditions": "Pw≦10μs, Duty cycle≦1%",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "VGS = 0V, IS = -200mA; pulsed",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Breakdown voltage temperature coefficient",+ "symbol": "ΔV(BR)DSS/ΔTj",+ "kind": "temperature_coefficient",+ "unit": "mV/℃",+ "min": null,+ "typ": -21.9,+ "max": null,+ "conditions": "ID = -1mA; referenced to 25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage temperature coefficient",+ "symbol": "ΔVGS(th)/ΔTj",+ "kind": "temperature_coefficient",+ "unit": "mV/℃",+ "min": null,+ "typ": 2.4,+ "max": null,+ "conditions": "ID = -1mA; referenced to 25℃",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +474,4 @@ "visibility": { "public": true }-}+}