component
RZF020P01TL
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RZF020P01TL
ROHM Semicon · MOSFETs · SOT-323
RZF020P01TL from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with built-in G-S protection diode; gate-source voltage limited to ±10 V and drivable from 1.5 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; body diode continuous forward current is -0.6 A. |
| 3 | Drain | passive | Drain terminal with drain-source voltage of -12 V and continuous drain current of ±2 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | -12 | V | 1 | |||
| Continuous drain current | ID | -2 | 2 | A | 1 | ||
| Pulsed drain current | IDP | -6 | 6 | A | Pw≦10μs, Duty cycle≦1% (*1) | 1 | |
| Gate - Source voltage | VGSS | -10 | 10 | V | 1 | ||
| Power dissipation | PD | 0.8 | W | Mounted on a ceramic board (30x30x0.8mm) (*2) | 1 | ||
| Power dissipation | PD | 0.75 | W | Mounted on a FR4 (25×25×0.8mm) (*3) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - ambient | RthJA | 156 | ℃/W | Mounted on a ceramic board (30x30x0.8mm) (*2) | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 167 | ℃/W | Mounted on a FR4 (25×25×0.8mm) (*3) | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | -12 | V | VGS = 0V, ID = -1mA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -12V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VGS = ±10V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | -0.3 | -1 | V | VDS = -6V, ID = -1mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 75 | 105 | mΩ | VGS = -4.5V, ID = -2A, pulsed (*4) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 105 | 145 | mΩ | VGS = -2.5V, ID = -1A, pulsed (*4) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 150 | 225 | mΩ | VGS = -1.8V, ID = -1A, pulsed (*4) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 200 | 400 | mΩ | VGS = -1.5V, ID = -0.4A, pulsed (*4) | 2 | |
| Forward transfer admittance | /Yfs/ | 2 | S | VDS = -6V, ID = -2A, pulsed (*4) | 2 | ||
| Continuous forward current (body diode) | IS | -0.6 | A | Ta = 25℃ | 3 | ||
| Pulse forward current (body diode) | ISP | -6 | A | Pw≦10μs, Duty cycle≦1% (*1) | 3 | ||
| Forward voltage (body diode) | VSD | -1.2 | V | VGS = 0V, IS = -2A, pulsed (*4) | 3 |
CAD (KiCad official)
- Symbol:
RZF020P01TL - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
rzf020p01tl-etched.step/rzf020p01tl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rzf020p01tl.step/rzf020p01tl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
2262405239f552b0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RZF020P01TL
**ROHM Semicon** · MOSFETs · SOT-323
RZF020P01TL from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal with built-in G-S protection diode; gate-source voltage limited to ±10 V and drivable from 1.5 V. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; body diode continuous forward current is -0.6 A. |
| 3 | Drain | passive | Drain terminal with drain-source voltage of -12 V and continuous drain current of ±2 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | | | -12 | V | | 1 |
| Continuous drain current | ID | -2 | | 2 | A | | 1 |
| Pulsed drain current | IDP | -6 | | 6 | A | Pw≦10μs, Duty cycle≦1% (*1) | 1 |
| Gate - Source voltage | VGSS | -10 | | 10 | V | | 1 |
| Power dissipation | PD | | | 0.8 | W | Mounted on a ceramic board (30x30x0.8mm) (*2) | 1 |
| Power dissipation | PD | | | 0.75 | W | Mounted on a FR4 (25×25×0.8mm) (*3) | 1 |
| Junction temperature | Tj | | | 150 | ℃ | | 1 |
| Operating junction and storage temperature range | Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal resistance, junction - ambient | RthJA | | | 156 | ℃/W | Mounted on a ceramic board (30x30x0.8mm) (*2) | 2 |
| Thermal resistance, junction - ambient | RthJA | | | 167 | ℃/W | Mounted on a FR4 (25×25×0.8mm) (*3) | 2 |
| Drain - Source breakdown voltage | V(BR)DSS | -12 | | | V | VGS = 0V, ID = -1mA | 2 |
| Zero gate voltage drain current | IDSS | | | -1 | μA | VDS = -12V, VGS = 0V | 2 |
| Gate - Source leakage current | IGSS | -10 | | 10 | μA | VGS = ±10V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | -0.3 | | -1 | V | VDS = -6V, ID = -1mA | 2 |
| Static drain - source on - state resistance | RDS(on) | | 75 | 105 | mΩ | VGS = -4.5V, ID = -2A, pulsed (*4) | 2 |
| Static drain - source on - state resistance | RDS(on) | | 105 | 145 | mΩ | VGS = -2.5V, ID = -1A, pulsed (*4) | 2 |
| Static drain - source on - state resistance | RDS(on) | | 150 | 225 | mΩ | VGS = -1.8V, ID = -1A, pulsed (*4) | 2 |
| Static drain - source on - state resistance | RDS(on) | | 200 | 400 | mΩ | VGS = -1.5V, ID = -0.4A, pulsed (*4) | 2 |
| Forward transfer admittance | /Yfs/ | 2 | | | S | VDS = -6V, ID = -2A, pulsed (*4) | 2 |
| Continuous forward current (body diode) | IS | | | -0.6 | A | Ta = 25℃ | 3 |
| Pulse forward current (body diode) | ISP | | | -6 | A | Pw≦10μs, Duty cycle≦1% (*1) | 3 |
| Forward voltage (body diode) | VSD | | | -1.2 | V | VGS = 0V, IS = -2A, pulsed (*4) | 3 |
## CAD (KiCad official)
- Symbol: `RZF020P01TL`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `rzf020p01tl-etched.step` / `rzf020p01tl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rzf020p01tl.step` / `rzf020p01tl.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911382943715328) (14 pp, sha256 `2262405239f552b0`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rzf020p01tl-datasheet.pdf)