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RZF013P01TL-HXY

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HXY MOSFET MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RZF013P01TL-HXY

HXY MOSFET · MOSFETs · SOT-323

RZF013P01TL-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the P-channel MOSFET, with a gate-source voltage limit of ±12 V and a threshold of -0.4 to -1.0 V at ID=-250µA.
2 S passive Source; the P-channel source terminal, with a maximum continuous body-diode forward current of -1.0 A.
3 D passive Drain; the single lead on the opposite side of the package, rated for VDS of -20 V and continuous drain current of -1.8 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-323
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V TA=25℃ 1
Gate-Source Voltage VGS -12 12 V TA=25℃ 1
Drain Current-Continuous ID -1.8 A TA=25℃ 1
Drain Current-Pulsed IDM -3 A TA=25℃ 1
Maximum Power Dissipation PD 0.29 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ TA=25℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 431 ℃/W 1
Drain-source breakdown voltage V(BR)DSS -20 V VGS = 0V, ID =-250μA 2
Zero gate voltage drain current IDSS -1 µA VDS =-18V,VGS = 0V 2
Gate-body leakage current IGSS -100 100 nA VGS =±12V, VDS = 0V 2
Gate threshold voltage VGS(th) -0.4 -0.7 -1 V VDS =VGS, ID =-250μA 2
Drain-source on-resistance RDS(on) 150 mΩ VGS =-4.5V, ID =-2A 2
Drain-source on-resistance RDS(on) 230 mΩ VGS =-2.5V, ID =-1.0A 2
Maximum Continuous Drain to Source Diode Forward Current IS -1 A 2
Diode forward voltage VSD -1.2 V IS=-1.0A, VGS =0V 2
Input capacitance Ciss 680 pF VDS =-8V,VGS =0V, f =1MHz 2
Output capacitance Coss 130 pF VDS =-8V,VGS =0V, f =1MHz 2
Reverse transfer capacitance Crss 95 pF VDS =-8V,VGS =0V, f =1MHz 2
Turn-on delay time td(on) 10 nS VGS=-4.5V,VDS=-10V, ID=-1.0A,RG=5.1Ω 2
Turn-on rise time tr 20 nS VGS=-4.5V,VDS=-10V, ID=-1.0A,RG=5.1Ω 2
Turn-off delay time td(off) 35 nS VGS=-4.5V,VDS=-10V, ID=-1.0A,RG=5.1Ω 2
Turn-off fall time tf 18 nS VGS=-4.5V,VDS=-10V, ID=-1.0A,RG=5.1Ω 2

CAD (KiCad official)

  • Symbol: RZF013P01TL-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: rzf013p01tl-hxy-etched.step / rzf013p01tl-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rzf013p01tl-hxy.step / rzf013p01tl-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 7b072f1b20e4a954, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF