component
RYM002N05T2CL
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| rym002n05t2cl-etched.glb | 17d ago |
| rym002n05t2cl-etched.step | 17d ago |
| rym002n05t2cl-hero.glb | 17d ago |
| rym002n05t2cl-hero.overlay.json | 17d ago |
| rym002n05t2cl.glb | 17d ago |
| rym002n05t2cl.kicad_mod | 24d ago |
| rym002n05t2cl.kicad_sym | 24d ago |
| rym002n05t2cl.lbr | 24d ago |
| rym002n05t2cl.step | 17d ago |
RYM002N05T2CL
ROHM Semicon · MOSFETs · SOT-723
RYM002N05T2CL from ROHM Semicon, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limited to ±8 V, 0.9 V drive, with ESD protection diode to source. |
| 2 | Source | passive | Source terminal; body diode continuous forward current is 125 mA and pulsed 800 mA. |
| 3 | Drain | passive | Drain terminal; drain-source voltage 50 V max, continuous drain current ±200 mA and pulsed ±800 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-723 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source breakdown voltage | V(BR)DSS | 50 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 50V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VGS = ±8V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 0.3 | 0.8 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 1.6 | 2.2 | Ω | VGS = 4.5V, ID = 200mA (note *3 Pulsed) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 1.7 | 2.4 | Ω | VGS = 2.5V, ID = 200mA (note *3 Pulsed) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 2 | 2.8 | Ω | VGS = 1.5V, ID = 200mA (note *3 Pulsed) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 2.2 | 3.3 | Ω | VGS = 1.2V, ID = 100mA (note *3 Pulsed) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 3 | 9 | Ω | VGS = 0.9V, ID = 10mA (note *3 Pulsed) | 2 | |
| Forward transfer admittance | /Yfs/ | 200 | mS | VDS = 10V, ID = 200mA (note *3 Pulsed) | 2 | ||
| Forward voltage | VSD | 1.2 | V | VGS = 0V, IS = 200mA (note *3) | 3 | ||
| Continuous forward current | IS | 125 | mA | Ta = 25℃ | 3 | ||
| Pulse forward current | ISP | 800 | mA | Pw≦10μs, Duty cycle≦1% (note *1) | 3 | ||
| Drain - Source voltage | VDSS | 50 | V | Ta = 25°C unless otherwise specified | 1 | ||
| Continuous drain current | ID | -200 | 200 | mA | Ta = 25°C unless otherwise specified | 1 | |
| Pulsed drain current | IDP | -800 | 800 | mA | Pw≦10μs, Duty cycle≦1% (note *1) | 1 | |
| Gate - Source voltage | VGSS | -8 | 8 | V | Ta = 25°C unless otherwise specified | 1 | |
| Power dissipation | PD | 150 | mW | Each terminal mounted on a reference land (note *2) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - ambient | RthJA | 833 | ℃/W | Each terminal mounted on a reference land (note *2) | 2 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS | 53.7 | mV/℃ | ID = 1mA, ΔTj referenced to 25℃ | 2 | ||
| Gate threshold voltage temperature coefficient | ΔVGS(th) | -1.4 | mV/℃ | ID = 1mA, ΔTj referenced to 25℃ | 2 | ||
| Input capacitance | Ciss | 26 | pF | VGS = 0V | 3 | ||
| Output capacitance | Coss | 6 | pF | VDS = 10V | 3 | ||
| Reverse transfer capacitance | Crss | 3 | pF | f = 1MHz | 3 | ||
| Turn - on delay time | td(on) | 5 | ns | VDD ⋍ 25V, VGS = 4.5V (note *3) | 3 | ||
| Rise time | tr | 8 | ns | ID = 100mA (note *3) | 3 | ||
| Turn - off delay time | td(off) | 17 | ns | RL ⋍ 250Ω (note *3) | 3 | ||
| Fall time | tf | 43 | ns | RG = 10Ω (note *3) | 3 |
CAD (KiCad official)
- Symbol:
RYM002N05T2CL - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
rym002n05t2cl-etched.step/rym002n05t2cl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rym002n05t2cl.step/rym002n05t2cl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (13 pp, sha256
dc2ea25b304e4dc0, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).