component

RY3415t3

Public Made by Adom

by adom

RYCHIP MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 16d ago
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README.md Publish 0.1.0 · Ray 16d ago
ry3415t3-etched.glb Publish 0.1.0 · Ray 16d ago
ry3415t3-etched.step ry3415t3: factory component page (tier=lcsc) · Ray 16d ago
ry3415t3-hero.glb ry3415t3: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
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ry3415t3.glb Publish 0.1.0 · Ray 16d ago
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ry3415t3.step Publish 0.1.0 · Ray 16d ago

RY3415t3

RYCHIP · MOSFETs · SOT-23

RY3415t3 from RYCHIP, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the pin-1 dot sits at this lead, and gate-source voltage is rated ±12 V with a threshold of -0.45 to -1.2 V.
2 S passive Source of the P-channel MOSFET, at the bottom-right lead in the top view; the continuous diode forward current is -5.5 A.
3 D passive Drain of the P-channel MOSFET, at the single top lead in the top view; drain-source voltage is rated -20 V and continuous drain current is -5.5 A.

Key specifications

Parameter Value
Manufacturer RYCHIP
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 3
Gate-Source Voltage VGS -12 12 V 3
Drain Current-Continuous ID -5.5 A 3
Drain Current-Continuous ID -4.7 A TA=70℃ 3
Pulsed Drain Current IDM -30 A Repetitive rating: pulse width limited by maximum junction temperature 3
Maximum Power Dissipation PD 1.6 W 3
Operating junction temperature TJ -55 150 °C 3
Storage temperature Tstg -55 150 °C 3
Junction-to-ambient thermal resistance RθJA 80 °C/W Per JESD 51-7; simulated on 4-layer JEDEC board 3
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250μA 4
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-20V, VGS=0V 4
Gate-Body Leakage Current IGSS -10 10 μA VGS=±10V, VDS=0V 4
Gate Threshold Voltage VGS(th) -0.45 -0.8 -1.2 V VDS=VGS, ID=-250μA 4
Drain-Source On-State Resistance RDS(ON) 30 36 mΩ VGS=-5V, ID=-1A 4
Drain-Source On-State Resistance RDS(ON) 32 39 mΩ VGS=-4.5V, ID=-2A 4
Drain-Source On-State Resistance RDS(ON) 48 60 mΩ VGS=-2.5V, ID=-1A 4
Forward Transconductance gFS 25 S VDS=-5V, ID=-2A 4
Input Capacitance Ciss 310 pF VDS=-10V, VGS=0V, F=1KHz 4
Output Capacitance Coss 81 pF 4
Reverse Transfer Capacitance Crss 28 pF 4
Gate Resistance Rg 2.3 kΩ VDS=0V, VGS=0V, F=500KHz 4
Turn-on Delay Time td(on) 13 ns VDD=-10V, RL=1Ω, VGS=-4.5V, RG=3Ω 4
Turn-on Rise Time tr 11 ns 4
Turn-Off Delay Time td(off) 20 ns 4
Turn-Off Fall Time tf 31 ns 4
Total Gate Charge Qg 10 nC VDS=-10V, ID=-4A, VGS=-4.5V 4
Gate-Source Charge Qgs 1.1 nC 4
Gate-Drain Charge Qgd 2.4 nC 4
Diode Forward Voltage VSD -1.2 V VGS=0V, IS=-1A 4
Diode Forward Current IS -5.5 A Surface mounted on 4-layer JEDEC board, t ≤ 10 sec 4

CAD (KiCad official)

  • Symbol: RY3415t3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ry3415t3-etched.step / ry3415t3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ry3415t3.step / ry3415t3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: RYCHIP datasheet (8 pp, sha256 4d5ae55769adb984, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF