# RUU002N05T106

**ROHM Semicon** · MOSFETs · SOT-323

RUU002N05T106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SOURCE | passive | Source terminal of the N-channel MOSFET, with a body diode from source to drain; continuous source current IS is limited to 150 mA and pulsed ISP to 800 mA. |
| 2 | GATE | input | Gate terminal for 1.2 V drive, with gate-source voltage VGSS rated at 8 V maximum and an ESD protection diode shown in the inner circuit. |
| 3 | DRAIN | passive | Drain terminal with drain-source voltage VDSS rated at 50 V, continuous drain current ID of 200 mA and pulsed IDP of 800 mA (Pw 10 s, duty cycle 1%). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 50 |  |  | V | ID=1mA, VGS=0V | 2 |
| Gate threshold voltage | VGS (th) | 0.3 |  | 1 | V | VDS=10V, ID=1mA | 2 |
| Forward transfer admittance | /Yfs/ | 0.4 |  |  | S | ID=200mA, VDS=10V | 2 |
| Gate-source leakage | IGSS |  |  | 10 | A | VGS=8V, VDS=0V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | A | VDS=50V, VGS=0V | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 1.6 | 2.2 |  | ID=200mA, VGS=4.5V | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 1.7 | 2.4 |  | ID=200mA, VGS=2.5V | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 1.9 | 2.7 |  | ID=100mA, VGS=1.8V | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 2 | 4 |  | ID=40mA, VGS=1.5V | 2 |
| Static drain-source on-state resistance | RDS(on) |  | 2.4 | 7.2 |  | ID=20mA, VGS=1.2V | 2 |
| Forward voltage | VSD |  |  | 1.2 | V | Is=200mA, VGS=0V | 2 |
| Drain-source voltage | VDSS |  |  | 50 | V | Ta=25C | 1 |
| Gate-source voltage | VGSS |  |  | 8 | V | Ta=25C | 1 |
| Continuous drain current | ID |  |  | 200 | mA | Ta=25C | 1 |
| Pulsed drain current | IDP |  |  | 800 | mA | Pw10s, Duty cycle1% | 1 |
| Continuous source current (body diode) | IS |  |  | 150 | mA | Ta=25C | 1 |
| Pulsed source current (body diode) | ISP |  |  | 800 | mA | Pw10s, Duty cycle1% | 1 |
| Power dissipation | PD |  |  | 200 | mW | Each terminal mounted on a recommended land | 1 |
| Channel temperature | Tch |  |  | 150 | C |  | 1 |
| Range of storage temperature | Tstg | -55 |  | 150 | C |  | 1 |
| Channel to ambient thermal resistance | Rth (ch-a) |  |  | 625 | C / W | Each terminal mounted on a recommended land | 1 |

## CAD (KiCad official)

- Symbol: `RUU002N05T106`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `ruu002n05t106-etched.step` / `ruu002n05t106-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ruu002n05t106.step` / `ruu002n05t106.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590226215434162176) (6 pp, sha256 `48b0af10391ac6c1`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ruu002n05t106-datasheet.pdf)