component
RUE002N02-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRUE002N02-HXY
HXY MOSFET · MOSFETs · SOT-523
RUE002N02-HXY from HXY MOSFET, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the N-channel MOSFET with gate-source voltage limited to ±8 V and RDS(ON) specified at VGS=4.5 V and 2.5 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with continuous source-diode forward current up to 0.8 A. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, rated for 20 V drain-source voltage and 0.8 A continuous drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-523 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Drain Current-Continuous | ID | 0.8 | A | 1 | |||
| Maximum Power Dissipation | PD | 0.15 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 850 | ℃/W | Note 2 | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =250μA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =20V,VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -10 | 10 | µA | VGS =±8V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VDS =VGS, ID =250μA | 2 |
| Drain-source on-resistance (VGS=4.5V) | RDS(on) | 0.25 | Ω | VGS =4.5V, ID =0.5A | 2 | ||
| Drain-source on-resistance (VGS=2.5V) | RDS(on) | 0.36 | Ω | VGS =2.5V, ID =0.5A | 2 | ||
| Maximum Continuous Drain to Source Diode Forward Current | IS | 0.8 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 1.2 | A | 2 | |||
| Diode forward voltage | VSD | 1.2 | V | IS=0.5A, VGS =0V | 2 | ||
| Input capacitance | Ciss | 50 | pF | VDS =16V,VGS =0V, f =1MHz | 2 | ||
| Output capacitance | Coss | 7 | pF | VDS =16V,VGS =0V, f =1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 4.5 | pF | VDS =16V,VGS =0V, f =1MHz | 2 | ||
| Turn-on delay time | td(on) | 2 | nS | VGS=4.5V,VDS=10V, RL=10Ω | 2 | ||
| Turn-on rise time | tr | 32 | nS | VGS=4.5V,VDS=10V, RL=10Ω | 2 | ||
| Turn-off delay time | td(off) | 47 | nS | VGS=4.5V,VDS=10V, RL=10Ω | 2 | ||
| Turn-off fall time | tf | 22 | nS | VGS=4.5V,VDS=10V, RL=10Ω | 2 |
CAD (KiCad official)
- Symbol:
RUE002N02-HXY - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
rue002n02-hxy-etched.step/rue002n02-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rue002n02-hxy.step/rue002n02-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
3c8b2000297e9696, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).