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Contents

README

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RUE002N02-HXY

HXY MOSFET · MOSFETs · SOT-523

RUE002N02-HXY from HXY MOSFET, in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the N-channel MOSFET with gate-source voltage limited to ±8 V and RDS(ON) specified at VGS=4.5 V and 2.5 V.
2 S passive Source terminal of the N-channel MOSFET, with continuous source-diode forward current up to 0.8 A.
3 D passive Drain terminal of the N-channel MOSFET, rated for 20 V drain-source voltage and 0.8 A continuous drain current.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-523
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -8 8 V 1
Drain Current-Continuous ID 0.8 A 1
Maximum Power Dissipation PD 0.15 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 850 ℃/W Note 2 1
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID =250μA 2
Zero gate voltage drain current IDSS 1 µA VDS =20V,VGS = 0V 2
Gate-body leakage current IGSS -10 10 µA VGS =±8V, VDS = 0V 2
Gate threshold voltage VGS(th) 0.5 0.7 1 V VDS =VGS, ID =250μA 2
Drain-source on-resistance (VGS=4.5V) RDS(on) 0.25 Ω VGS =4.5V, ID =0.5A 2
Drain-source on-resistance (VGS=2.5V) RDS(on) 0.36 Ω VGS =2.5V, ID =0.5A 2
Maximum Continuous Drain to Source Diode Forward Current IS 0.8 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 1.2 A 2
Diode forward voltage VSD 1.2 V IS=0.5A, VGS =0V 2
Input capacitance Ciss 50 pF VDS =16V,VGS =0V, f =1MHz 2
Output capacitance Coss 7 pF VDS =16V,VGS =0V, f =1MHz 2
Reverse transfer capacitance Crss 4.5 pF VDS =16V,VGS =0V, f =1MHz 2
Turn-on delay time td(on) 2 nS VGS=4.5V,VDS=10V, RL=10Ω 2
Turn-on rise time tr 32 nS VGS=4.5V,VDS=10V, RL=10Ω 2
Turn-off delay time td(off) 47 nS VGS=4.5V,VDS=10V, RL=10Ω 2
Turn-off fall time tf 22 nS VGS=4.5V,VDS=10V, RL=10Ω 2

CAD (KiCad official)

  • Symbol: RUE002N02-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: rue002n02-hxy-etched.step / rue002n02-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rue002n02-hxy.step / rue002n02-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 3c8b2000297e9696, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF