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RUC002N05HZGT116

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RUC002N05HZGT116

ROHM Semicon · MOSFETs · SOT-23

RUC002N05HZGT116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal with internal ESD protection diode; VGSS max ±8 V, threshold 0.3 to 1.0 V at VDS = 10 V, ID = 1 mA, 1.2 V drive capable.
2 Source passive Source terminal (ground side for low-side switching); body diode continuous forward current IS max 150 mA.
3 Drain passive Drain terminal; VDSS 50 V, continuous drain current ±200 mA and pulsed ±800 mA.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS 50 V 1
Continuous drain current ID -200 200 mA 1
Pulsed drain current IDP -800 800 mA *1 Pw≦10μs, Duty cycle≦1% 1
Gate - Source voltage VGSS -8 8 V 1
Power dissipation PD 350 mW *2 Mounted on a ceramic board (7.0×5.0×0.8mm) 1
Power dissipation PD 200 mW *3 Mounted on a FR4 (20.0×12.0×0.8mm,Cu pad : 0.8mm2) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - ambient RthJA 357 ℃/W *2 Mounted on a ceramic board (7.0×5.0×0.8mm) 2
Thermal resistance, junction - ambient RthJA 625 ℃/W *3 Mounted on a FR4 (20.0×12.0×0.8mm,Cu pad : 0.8mm2) 2
Drain - Source breakdown voltage V(BR)DSS 50 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current IDSS 1 μA VDS = 50V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VGS = ±8V, VDS = 0V 2
Gate threshold voltage VGS(th) 0.3 1 V VDS = 10V, ID = 1mA 2
Static drain - source on - state resistance RDS(on) 2.2 Ω VGS = 4.5V, ID = 200mA (*4 Pulsed) 2
Static drain - source on - state resistance RDS(on) 2.4 Ω VGS = 2.5V, ID = 200mA (*4 Pulsed) 2
Static drain - source on - state resistance RDS(on) 2.7 Ω VGS = 1.8V, ID = 100mA (*4 Pulsed) 2
Static drain - source on - state resistance RDS(on) 4 Ω VGS = 1.5V, ID = 40mA (*4 Pulsed) 2
Static drain - source on - state resistance RDS(on) 7.2 Ω VGS = 1.2V, ID = 20mA (*4 Pulsed) 2
Forward transfer admittance /Yfs/ 0.4 S VDS = 10V, ID = 200mA (*4 Pulsed) 2
Continuous forward current IS 150 mA Ta = 25℃ 3
Pulse forward current ISP 800 mA 3
Forward voltage VSD 1.2 V VGS = 0V, IS = 200mA (*4 Pulsed) 3

CAD (KiCad official)

  • Symbol: RUC002N05HZGT116
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ruc002n05hzgt116-etched.step / ruc002n05hzgt116-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ruc002n05hzgt116.step / ruc002n05hzgt116.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (13 pp, sha256 67e7fcaaba32251a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF