component

RU1L002SNTL

Public Made by Adom

by adom

ROHM Semicon MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RU1L002SNTL

ROHM Semicon · MOSFETs · SOT-323

RU1L002SNTL from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal with internal ESD protection diode to source; gate-source voltage limited to ±20 V, threshold 1.0 to 2.3 V at ID = 1 mA.
2 Source passive Source terminal, also the body diode anode; continuous drain current is ±250 mA and body diode forward current is 125 mA.
3 Drain passive Drain terminal rated for 60 V drain-source voltage and ±250 mA continuous current (±1 A pulsed).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source breakdown voltage V(BR)DSS 60 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current IDSS 1 μA VDS = 60V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 1 2.3 V VDS = 10V, ID = 1mA 2
Static drain - source on-state resistance RDS(on) 2.4 Ω VGS = 10V, ID = 250mA 2
Static drain - source on-state resistance RDS(on) 3 Ω VGS = 4.5V, ID = 250mA 2
Static drain - source on-state resistance RDS(on) 3.2 Ω VGS = 4.0V, ID = 250mA 2
Static drain - source on-state resistance RDS(on) 12 Ω VGS = 2.5V, ID = 10mA 2
Forward transfer admittance /Yfs/ 250 mS VDS = 10V, ID = 250mA 2
Continuous forward current (body diode) IS 125 mA Ta = 25℃ 3
Pulse forward current (body diode) ISP 1 A Pw≦10μs, Duty cycle≦1% (note *1) 3
Forward voltage (body diode) VSD 1.2 V VGS = 0V, IS = 250mA 3
Drain - Source voltage VDSS 60 V Ta = 25°C, unless otherwise specified 1
Continuous drain current ID -250 250 mA Ta = 25°C, unless otherwise specified 1
Pulsed drain current IDP -1 1 A Pw≦10μs, Duty cycle≦1% (note *1) 1
Gate - Source voltage VGSS -20 20 V Ta = 25°C, unless otherwise specified 1
Power dissipation PD 200 mW Each terminal mounted on a reference land (note *2) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - ambient RthJA 625 ℃/W Each terminal mounted on a reference land (note *2) 2

CAD (KiCad official)

  • Symbol: RU1L002SNTL
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: ru1l002sntl-etched.step / ru1l002sntl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ru1l002sntl.step / ru1l002sntl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (12 pp, sha256 a081559e7b4d4376, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF