component
RTM002P02T2L
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ROHM Semicon MOSFETs, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RTM002P02T2L
ROHM Semicon · MOSFETs · SOT-723
RTM002P02T2L from ROHM Semicon, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; the absolute maximum gate-source voltage VGSS is ±12 V, and the inner circuit shows an ESD protection diode. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the inner circuit shows a body diode, with a maximum source-drain forward voltage VSD of −1.2 V at IS = −0.1 A, VGS = 0 V. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; the absolute maximum drain-source voltage VDSS is −20 V and the continuous drain current ID is ±0.2 A (pulsed ±0.4 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-723 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | -20 | V | 1 | |||
| Gate-source voltage | VGSS | -12 | 12 | V | 1 | ||
| Drain current, continuous | ID | -0.2 | 0.2 | A | 1 | ||
| Drain current, pulsed | IDP | -0.4 | 0.4 | A | Pw≤10µs, Duty cycle≤1% | 1 | |
| Total power dissipation | PD | 0.15 | W | Each terminal mounted on a recommended land | 1 | ||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Range of storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Channel to ambient thermal resistance | Rth(ch-a) | 833 | °C/W | Channel to ambient; each terminal mounted on a recommended land | 1 | ||
| Gate-source leakage | IGSS | -10 | 10 | µA | VGS= ±12V, VDS=0V | 2 | |
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | ID= −1mA, VGS=0V | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | µA | VDS= −20V, VGS=0V | 2 | ||
| Gate threshold voltage | VGS (th) | -0.7 | -2 | V | VDS= −10V, ID= −1mA | 2 | |
| Static drain-source on-state resistance | RDS (on) | 1 | 1.5 | Ω | ID= −0.2A, VGS= −4.5V | 2 | |
| Static drain-source on-state resistance | RDS (on) | 1.1 | 1.6 | Ω | ID= −0.2A, VGS= −4V | 2 | |
| Static drain-source on-state resistance | RDS (on) | 2 | 3 | Ω | ID= −0.15A, VGS= −2.5V | 2 | |
| Forward transfer admittance | Yfs | 0.2 | S | VDS= −10V, ID= −0.15A | 2 | ||
| Forward voltage (body diode) | VSD | -1.2 | V | IS= −0.1A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
RTM002P02T2L - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
rtm002p02t2l-etched.step/rtm002p02t2l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rtm002p02t2l.step/rtm002p02t2l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (3 pp, sha256
aaa4c3b195644de7, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RTM002P02T2L
**ROHM Semicon** · MOSFETs · SOT-723
RTM002P02T2L from ROHM Semicon, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; the absolute maximum gate-source voltage VGSS is ±12 V, and the inner circuit shows an ESD protection diode. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the inner circuit shows a body diode, with a maximum source-drain forward voltage VSD of −1.2 V at IS = −0.1 A, VGS = 0 V. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; the absolute maximum drain-source voltage VDSS is −20 V and the continuous drain current ID is ±0.2 A (pulsed ±0.4 A). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-723 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | | | -20 | V | | 1 |
| Gate-source voltage | VGSS | -12 | | 12 | V | | 1 |
| Drain current, continuous | ID | -0.2 | | 0.2 | A | | 1 |
| Drain current, pulsed | IDP | -0.4 | | 0.4 | A | Pw≤10µs, Duty cycle≤1% | 1 |
| Total power dissipation | PD | | | 0.15 | W | Each terminal mounted on a recommended land | 1 |
| Channel temperature | Tch | | | 150 | °C | | 1 |
| Range of storage temperature | Tstg | -55 | | 150 | °C | | 1 |
| Channel to ambient thermal resistance | Rth(ch-a) | | | 833 | °C/W | Channel to ambient; each terminal mounted on a recommended land | 1 |
| Gate-source leakage | IGSS | -10 | | 10 | µA | VGS= ±12V, VDS=0V | 2 |
| Drain-source breakdown voltage | V(BR)DSS | -20 | | | V | ID= −1mA, VGS=0V | 2 |
| Zero gate voltage drain current | IDSS | | | -1 | µA | VDS= −20V, VGS=0V | 2 |
| Gate threshold voltage | VGS (th) | -0.7 | | -2 | V | VDS= −10V, ID= −1mA | 2 |
| Static drain-source on-state resistance | RDS (on) | | 1 | 1.5 | Ω | ID= −0.2A, VGS= −4.5V | 2 |
| Static drain-source on-state resistance | RDS (on) | | 1.1 | 1.6 | Ω | ID= −0.2A, VGS= −4V | 2 |
| Static drain-source on-state resistance | RDS (on) | | 2 | 3 | Ω | ID= −0.15A, VGS= −2.5V | 2 |
| Forward transfer admittance | Yfs | 0.2 | | | S | VDS= −10V, ID= −0.15A | 2 |
| Forward voltage (body diode) | VSD | | | -1.2 | V | IS= −0.1A, VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `RTM002P02T2L`
- Footprint: `Package_TO_SOT_SMD:SOT-723`
- 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `rtm002p02t2l-etched.step` / `rtm002p02t2l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rtm002p02t2l.step` / `rtm002p02t2l.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904207915634688) (3 pp, sha256 `aaa4c3b195644de7`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rtm002p02t2l-datasheet.pdf)