component
RSU12N65D
Public Made by Adomby adom
REASUNOS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRSU12N65D
REASUNOS · MOSFETs · TO-252
RSU12N65D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated at ±30 V maximum, with a threshold of 3.5 to 4.5 V at ID=250 µA. |
| 2 | D | passive | Drain, also the exposed tab; drain-to-source voltage is rated at 650 V and continuous drain current is 12 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current through the body diode is 12 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 650 | V | 1 | |||
| Continuous Drain Current | ID | 12 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 7 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 36 | A | 1 | |||
| Power Dissipation | PD | 80 | W | 1 | |||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | L=10mH, VDS=50V, RG=25Ω, TC=25℃ | 1 | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0…400V | 1 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0…400V, Tj=25℃, ISD≤ID | 1 | ||
| Maximum Temperature for Soldering Leads | TL | 300 | ℃ | Leads at 0.063in(1.6mm) from case for 10 seconds | 1 | ||
| Maximum Temperature for Soldering Package Body | TPKG | 260 | ℃ | Package body for 10 seconds | 1 | ||
| Operating Junction and Storage Temperature Range | TJ and TSTG | -55 | 150 | ℃ | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 1.56 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 68 | ℃/W | 1 cubic foot chamber, free air | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0V | 2 | ||
| Gate-to-Source Forward Leakage Current | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage Current | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 390 | 450 | mΩ | VGS=10V, ID=6A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 3.5 | 4.5 | V | VGS=VDS, ID=250µA | 2 | |
| Continuous Source Current (integral pn-diode in MOSFET) | IS | 12 | A | 3 | |||
| Maximum Pulsed Current | ISM | 44 | A | 3 | |||
| Diode Forward Voltage | VSD | 0.9 | 1.2 | V | IS=12A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
RSU12N65D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rsu12n65d-etched.step/rsu12n65d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rsu12n65d.step/rsu12n65d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (8 pp, sha256
f84510f774deca74, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).