component
RSS070P05HZGTB
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ROHM Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RSS070P05HZGTB
ROHM Semicon · MOSFETs · SOP-8
RSS070P05HZGTB from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET; the body diode conducts from drain to source with continuous forward current IS of -1.6A max. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, tied internally to the other source pins; continuous drain current is ±7.0A. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET, tied internally to the other source pins; gate-source voltage is rated ±20V. |
| 4 | Gate | passive | Gate terminal with ESD protection diode; gate-source voltage is rated ±20V and threshold voltage VGS(th) is -1.0V to -2.5V. |
| 5 | Drain | passive | Drain terminal of the P-channel MOSFET, tied internally to the other drain pins; drain-source voltage is rated -45V. |
| 6 | Drain | passive | Drain terminal of the P-channel MOSFET, tied internally to the other drain pins; pulsed drain current is ±28A. |
| 7 | Drain | passive | Drain terminal of the P-channel MOSFET, tied internally to the other drain pins; drain-source on-resistance is 27mΩ max at VGS = -10V. |
| 8 | Drain | passive | Drain terminal of the P-channel MOSFET, tied internally to the other drain pins; drain-source breakdown voltage is -45V min. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
CAD (KiCad official)
- Symbol:
RSS070P05HZGTB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
rss070p05hzgtb-etched.step/rss070p05hzgtb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rss070p05hzgtb.step/rss070p05hzgtb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
a5979bbaf271d2ba, retrieved 2026-10-29, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RSS070P05HZGTB
**ROHM Semicon** · MOSFETs · SOP-8
RSS070P05HZGTB from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the P-channel MOSFET; the body diode conducts from drain to source with continuous forward current IS of -1.6A max. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET, tied internally to the other source pins; continuous drain current is ±7.0A. |
| 3 | Source | passive | Source terminal of the P-channel MOSFET, tied internally to the other source pins; gate-source voltage is rated ±20V. |
| 4 | Gate | passive | Gate terminal with ESD protection diode; gate-source voltage is rated ±20V and threshold voltage VGS(th) is -1.0V to -2.5V. |
| 5 | Drain | passive | Drain terminal of the P-channel MOSFET, tied internally to the other drain pins; drain-source voltage is rated -45V. |
| 6 | Drain | passive | Drain terminal of the P-channel MOSFET, tied internally to the other drain pins; pulsed drain current is ±28A. |
| 7 | Drain | passive | Drain terminal of the P-channel MOSFET, tied internally to the other drain pins; drain-source on-resistance is 27mΩ max at VGS = -10V. |
| 8 | Drain | passive | Drain terminal of the P-channel MOSFET, tied internally to the other drain pins; drain-source breakdown voltage is -45V min. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## CAD (KiCad official)
- Symbol: `RSS070P05HZGTB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `rss070p05hzgtb-etched.step` / `rss070p05hzgtb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rss070p05hzgtb.step` / `rss070p05hzgtb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](docs/rss070p05hzgtb-datasheet.pdf) (14 pp, sha256 `a5979bbaf271d2ba`, retrieved 2026-10-29, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rss070p05hzgtb-datasheet.pdf)