component
RSS070N05HZGTB
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
| rss070n05hzgtb-etched.glb | 7d ago |
| rss070n05hzgtb-etched.step | 7d ago |
| rss070n05hzgtb-hero.glb | 7d ago |
| rss070n05hzgtb-hero.overlay.json | 7d ago |
| rss070n05hzgtb.glb | 7d ago |
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| verification.json | 7d ago |
RSS070N05HZGTB
ROHM Semicon · MOSFETs · SOP-8
RSS070N05HZGTB from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the Nch MOSFET, tied to pins 2 and 3 in the inner circuit. |
| 2 | S | passive | Source of the Nch MOSFET, tied to pins 1 and 3 in the inner circuit. |
| 3 | S | passive | Source of the Nch MOSFET, tied to pins 1 and 2 in the inner circuit. |
| 4 | G | input | Gate of the Nch MOSFET with ESD protection diode; VGSS rating is ±20V and VGS(th) is 1.0 to 2.5V. |
| 5 | D | passive | Drain of the Nch MOSFET, tied to pins 6, 7 and 8; VDSS 45V, ID ±7.0A. |
| 6 | D | passive | Drain of the Nch MOSFET, tied to pins 5, 7 and 8; VDSS 45V, ID ±7.0A. |
| 7 | D | passive | Drain of the Nch MOSFET, tied to pins 5, 6 and 8; VDSS 45V, ID ±7.0A. |
| 8 | D | passive | Drain of the Nch MOSFET, tied to pins 5, 6 and 7; VDSS 45V, ID ±7.0A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 45 | V | Ta = 25°C | 1 | ||
| Continuous drain current | ID | -7 | 7 | A | Ta = 25°C | 1 | |
| Pulsed drain current | IDP | -28 | 28 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 1 | |
| Gate-Source voltage | VGSS | -20 | 20 | V | Ta = 25°C | 1 | |
| Power dissipation (ceramic board) | PD | 2 | W | Mounted on a ceramic board (30×30×0.8mm) | 1 | ||
| Power dissipation (Cu board) | PD | 1.4 | W | Mounted on a Cu board (40×40×0.8mm) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-ambient (ceramic board) | RthJA | 62.5 | ℃/W | Mounted on a ceramic board (30×30×0.8mm) | 2 | ||
| Thermal resistance, junction-ambient (Cu board) | RthJA | 89.2 | ℃/W | Mounted on a Cu board (40×40×0.8mm) | 2 | ||
| Drain-Source breakdown voltage | V(BR)DSS | 45 | V | VGS = 0V, ID = 1mA | 2 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | 46.8 | mV/℃ | ID = 1mA, referenced to 25℃ | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 45V, VGS = 0V | 2 | ||
| Gate-Source leakage current | IGSS | 10 | μA | VGS = ±20V, VDS = 0V | 2 | ||
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS = 10V, ID = 1mA | 2 | |
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | -3.9 | mV/℃ | ID = 1mA, referenced to 25℃ | 2 | ||
| Static drain-source on-state resistance | RDS(on) | 18 | 25 | mΩ | VGS = 10V, ID = 7A, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 23 | 32 | mΩ | VGS = 4.5V, ID = 7A, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 25 | 35 | mΩ | VGS = 4.0V, ID = 7A, pulsed | 2 | |
| Gate resistance | RG | 3.2 | Ω | f = 1MHz, open drain | 2 | ||
| Forward transfer admittance | /Yfs/ | 6 | S | VDS = 10V, ID = 7A, pulsed | 2 | ||
| Input capacitance | Ciss | 1000 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Output capacitance | Coss | 230 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 125 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Turn-on delay time | td(on) | 16 | ns | VDD ≈ 25V, VGS = 10V, ID = 3.5A, RL ≈ 7.1Ω, RG = 10Ω | 3 | ||
| Rise time | tr | 27 | ns | VDD ≈ 25V, VGS = 10V, ID = 3.5A, RL ≈ 7.1Ω, RG = 10Ω | 3 | ||
| Turn-off delay time | td(off) | 57 | ns | VDD ≈ 25V, VGS = 10V, ID = 3.5A, RL ≈ 7.1Ω, RG = 10Ω | 3 | ||
| Fall time | tf | 21 | ns | VDD ≈ 25V, VGS = 10V, ID = 3.5A, RL ≈ 7.1Ω, RG = 10Ω | 3 | ||
| Total gate charge | Qg | 12 | 16.8 | nC | VDD ≈ 25V, ID = 7A, VGS = 5V | 3 | |
| Gate-Source charge | Qgs | 3 | nC | VDD ≈ 25V, ID = 7A, VGS = 5V | 3 | ||
| Gate-Drain charge | Qgd | 4.6 | nC | VDD ≈ 25V, ID = 7A, VGS = 5V | 3 | ||
| Body diode continuous forward current | IS | 1.6 | A | Ta = 25℃ | 3 | ||
| Body diode pulse forward current | ISP | 28 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 3 | ||
| Body diode forward voltage | VSD | 1.2 | V | VGS = 0V, IS = 1.6A | 3 |
CAD (KiCad official)
- Symbol:
RSS070N05HZGTB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
rss070n05hzgtb-etched.step/rss070n05hzgtb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rss070n05hzgtb.step/rss070n05hzgtb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (13 pp, sha256
b1c6719f8efc22e3, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).