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verification.json Verified: Published by the parts factory: tier mfr, 8 pins · Ray 7d ago

RSS070N05HZGTB

ROHM Semicon · MOSFETs · SOP-8

RSS070N05HZGTB from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the Nch MOSFET, tied to pins 2 and 3 in the inner circuit.
2 S passive Source of the Nch MOSFET, tied to pins 1 and 3 in the inner circuit.
3 S passive Source of the Nch MOSFET, tied to pins 1 and 2 in the inner circuit.
4 G input Gate of the Nch MOSFET with ESD protection diode; VGSS rating is ±20V and VGS(th) is 1.0 to 2.5V.
5 D passive Drain of the Nch MOSFET, tied to pins 6, 7 and 8; VDSS 45V, ID ±7.0A.
6 D passive Drain of the Nch MOSFET, tied to pins 5, 7 and 8; VDSS 45V, ID ±7.0A.
7 D passive Drain of the Nch MOSFET, tied to pins 5, 6 and 8; VDSS 45V, ID ±7.0A.
8 D passive Drain of the Nch MOSFET, tied to pins 5, 6 and 7; VDSS 45V, ID ±7.0A.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage VDSS 45 V Ta = 25°C 1
Continuous drain current ID -7 7 A Ta = 25°C 1
Pulsed drain current IDP -28 28 A Pw ≤ 10μs, Duty cycle ≤ 1% 1
Gate-Source voltage VGSS -20 20 V Ta = 25°C 1
Power dissipation (ceramic board) PD 2 W Mounted on a ceramic board (30×30×0.8mm) 1
Power dissipation (Cu board) PD 1.4 W Mounted on a Cu board (40×40×0.8mm) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction-ambient (ceramic board) RthJA 62.5 ℃/W Mounted on a ceramic board (30×30×0.8mm) 2
Thermal resistance, junction-ambient (Cu board) RthJA 89.2 ℃/W Mounted on a Cu board (40×40×0.8mm) 2
Drain-Source breakdown voltage V(BR)DSS 45 V VGS = 0V, ID = 1mA 2
Breakdown voltage temperature coefficient ΔV(BR)DSS/ΔTj 46.8 mV/℃ ID = 1mA, referenced to 25℃ 2
Zero gate voltage drain current IDSS 1 μA VDS = 45V, VGS = 0V 2
Gate-Source leakage current IGSS 10 μA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 1 2.5 V VDS = 10V, ID = 1mA 2
Gate threshold voltage temperature coefficient ΔVGS(th)/ΔTj -3.9 mV/℃ ID = 1mA, referenced to 25℃ 2
Static drain-source on-state resistance RDS(on) 18 25 mΩ VGS = 10V, ID = 7A, pulsed 2
Static drain-source on-state resistance RDS(on) 23 32 mΩ VGS = 4.5V, ID = 7A, pulsed 2
Static drain-source on-state resistance RDS(on) 25 35 mΩ VGS = 4.0V, ID = 7A, pulsed 2
Gate resistance RG 3.2 Ω f = 1MHz, open drain 2
Forward transfer admittance /Yfs/ 6 S VDS = 10V, ID = 7A, pulsed 2
Input capacitance Ciss 1000 pF VGS = 0V, VDS = 10V, f = 1MHz 3
Output capacitance Coss 230 pF VGS = 0V, VDS = 10V, f = 1MHz 3
Reverse transfer capacitance Crss 125 pF VGS = 0V, VDS = 10V, f = 1MHz 3
Turn-on delay time td(on) 16 ns VDD ≈ 25V, VGS = 10V, ID = 3.5A, RL ≈ 7.1Ω, RG = 10Ω 3
Rise time tr 27 ns VDD ≈ 25V, VGS = 10V, ID = 3.5A, RL ≈ 7.1Ω, RG = 10Ω 3
Turn-off delay time td(off) 57 ns VDD ≈ 25V, VGS = 10V, ID = 3.5A, RL ≈ 7.1Ω, RG = 10Ω 3
Fall time tf 21 ns VDD ≈ 25V, VGS = 10V, ID = 3.5A, RL ≈ 7.1Ω, RG = 10Ω 3
Total gate charge Qg 12 16.8 nC VDD ≈ 25V, ID = 7A, VGS = 5V 3
Gate-Source charge Qgs 3 nC VDD ≈ 25V, ID = 7A, VGS = 5V 3
Gate-Drain charge Qgd 4.6 nC VDD ≈ 25V, ID = 7A, VGS = 5V 3
Body diode continuous forward current IS 1.6 A Ta = 25℃ 3
Body diode pulse forward current ISP 28 A Pw ≤ 10μs, Duty cycle ≤ 1% 3
Body diode forward voltage VSD 1.2 V VGS = 0V, IS = 1.6A 3

CAD (KiCad official)

  • Symbol: RSS070N05HZGTB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: rss070n05hzgtb-etched.step / rss070n05hzgtb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rss070n05hzgtb.step / rss070n05hzgtb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (13 pp, sha256 b1c6719f8efc22e3, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF