RSS050P03TB-VB

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  "version": "0.1.1",
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  "description": "VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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  "component": {
    "mpn": "RSS050P03TB-VB",
    "manufacturer": "VBsemi Elec",
    "package": "SO-8",
    "pin_count": 8,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/9e15ff561c9482c471f16eb34a24f23c.pdf",
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    "distributor_links": {
      "lcsc": "C20755686"
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    "distributor_check": {
      "checked_at": "2026-10-27T08:13:48Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
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    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source of the P-channel MOSFET, tied internally with pins 2 and 3; continuous source current (diode) is -2.3 A (10 s) / -1.1 A steady state."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source of the P-channel MOSFET, tied internally with pins 1 and 3; drain-source voltage rating is -30 V."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the P-channel MOSFET, tied internally with pins 1 and 2; gate-source voltage is limited to ±20 V relative to this pin."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate of the P-channel MOSFET; VGS(th) is -0.7 V min to -2.0 V max at ID = -250 µA and absolute maximum VGS is ±20 V."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, tied internally with pins 6, 7 and 8; VDS max -30 V and RDS(on) 0.033 Ω at VGS = -10 V."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, tied internally with pins 5, 7 and 8; continuous drain current -5.8 A (10 s) / -4.1 A steady state at TA = 25 °C."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 8; pulsed drain current is -30 A."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 7; junction-to-foot (drain) thermal resistance is 24 °C/W typical, 30 °C/W maximum."
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