component
RSQ015N06TR
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRSQ015N06TR
ROHM Semicon · MOSFETs · SOT-23-6
RSQ015N06TR from ROHM Semicon, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal of the Nch MOSFET, internally connected to the other drain pins (VDSS 60V, ID ±1.5A). |
| 2 | Drain | passive | Drain terminal of the Nch MOSFET, internally connected to the other drain pins (VDSS 60V, ID ±1.5A). |
| 3 | Gate | input | Gate terminal with built-in G-S protection diode, VGSS ±20V and threshold VGS(th) 1.0 to 2.5V. |
| 4 | Source | passive | Source terminal of the Nch MOSFET with body diode, continuous forward current IS 1A max. |
| 5 | Drain | passive | Drain terminal of the Nch MOSFET, internally connected to the other drain pins (VDSS 60V, ID ±1.5A). |
| 6 | Drain | passive | Drain terminal of the Nch MOSFET, internally connected to the other drain pins (VDSS 60V, ID ±1.5A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 60V, VGS = 0V | 2 | ||
| Gate-Source leakage current | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain-source on-state resistance | RDS(on) | 210 | 290 | mΩ | VGS = 10V, ID = 1.5A, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 240 | 330 | mΩ | VGS = 4.5V, ID = 1.5A, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 255 | 350 | mΩ | VGS = 4V, ID = 1.5A, pulsed | 2 | |
| Forward transfer admittance | /Yfs/ | 1 | S | VDS = 10V, ID = 1.5A, pulsed | 2 | ||
| Body diode continuous forward current | IS | 1 | A | Ta = 25℃ | 3 | ||
| Body diode pulse forward current | ISP | 6 | A | Pw ≦ 10μs, Duty cycle ≦ 1% | 3 | ||
| Body diode forward voltage | VSD | 1.2 | V | VGS = 0V, IS = 1.5A, pulsed | 3 | ||
| Drain-Source voltage | VDSS | 60 | V | Ta = 25°C | 1 | ||
| Continuous drain current | ID | -1.5 | 1.5 | A | Ta = 25°C | 1 | |
| Pulsed drain current | IDP | -6 | 6 | A | Pw ≦ 10μs, Duty cycle ≦ 1% | 1 | |
| Gate-Source voltage | VGSS | -20 | 20 | V | Ta = 25°C | 1 | |
| Power dissipation (ceramic board) | PD | 1.25 | W | Mounted on a ceramic board (30×30×0.8mm) | 1 | ||
| Power dissipation (FR4) | PD | 0.95 | W | Mounted on a FR4 (25×25×0.8mm) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-ambient (ceramic board) | RthJA | 100 | ℃/W | Mounted on a ceramic board (30×30×0.8mm) | 2 | ||
| Thermal resistance, junction-ambient (FR4) | RthJA | 132 | ℃/W | Mounted on a FR4 (25×25×0.8mm) | 2 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | 63.7 | mV/℃ | ID = 1mA referenced to 25℃ | 2 | ||
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | -2.8 | mV/℃ | ID = 1mA referenced to 25℃ | 2 | ||
| Gate resistance | RG | 10 | Ω | f = 1MHz, open drain | 2 | ||
| Input capacitance | Ciss | 110 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Output capacitance | Coss | 28 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 12 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Turn-on delay time | td(on) | 6 | ns | VDD ⋍ 30V, VGS = 10V, ID = 0.7A, RL ⋍ 42.8Ω, RG = 10Ω | 3 | ||
| Rise time | tr | 9 | ns | VDD ⋍ 30V, VGS = 10V, ID = 0.7A, RL ⋍ 42.8Ω, RG = 10Ω | 3 | ||
| Turn-off delay time | td(off) | 15 | ns | VDD ⋍ 30V, VGS = 10V, ID = 0.7A, RL ⋍ 42.8Ω, RG = 10Ω | 3 | ||
| Fall time | tf | 10 | ns | VDD ⋍ 30V, VGS = 10V, ID = 0.7A, RL ⋍ 42.8Ω, RG = 10Ω | 3 | ||
| Total gate charge | Qg | 2 | nC | VDD ⋍ 30V, ID = 1.5A, VGS = 5V | 3 | ||
| Gate-Source charge | Qgs | 0.8 | nC | VDD ⋍ 30V, ID = 1.5A, VGS = 5V | 3 | ||
| Gate-Drain charge | Qgd | 0.5 | nC | VDD ⋍ 30V, ID = 1.5A, VGS = 5V | 3 |
CAD (KiCad official)
- Symbol:
RSQ015N06TR - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
rsq015n06tr-etched.step/rsq015n06tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rsq015n06tr.step/rsq015n06tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
00793b987f0a1c45, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).