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RSH070P05GZETB

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ROHM Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RSH070P05GZETB

ROHM Semicon · MOSFETs · SOP-8

RSH070P05GZETB from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the P-channel MOSFET, connected internally to pins 2 and 3 (drain-source rating -45V, continuous drain current ±7.0A).
2 Source passive Source terminal of the P-channel MOSFET, connected internally to pins 1 and 3 (drain-source rating -45V, continuous drain current ±7.0A).
3 Source passive Source terminal of the P-channel MOSFET, connected internally to pins 1 and 2 (drain-source rating -45V, continuous drain current ±7.0A).
4 Gate input Gate terminal with internal ESD protection diode; gate-source voltage limited to ±20V, threshold -1.0 to -2.5V.
5 Drain passive Drain terminal, connected internally to pins 6, 7 and 8 (VDSS -45V, pulsed drain current ±28A).
6 Drain passive Drain terminal, connected internally to pins 5, 7 and 8 (VDSS -45V, pulsed drain current ±28A).
7 Drain passive Drain terminal, connected internally to pins 5, 6 and 8 (VDSS -45V, pulsed drain current ±28A).
8 Drain passive Drain terminal, connected internally to pins 5, 6 and 7 (VDSS -45V, pulsed drain current ±28A).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS -45 V 1
Continuous drain current ID -7 7 A 1
Pulsed drain current IDP -28 28 A Pw≦10μs, Duty cycle≦1% 1
Gate - Source voltage VGSS -20 20 V 1
Power dissipation PD 2 W Mounted on a ceramic board (30×30×0.8mm) 1
Power dissipation PD 1.4 W Mounted on a FR4 (25×25×0.8mm) 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - ambient RthJA 62.5 ℃/W Mounted on a ceramic board (30×30×0.8mm) 2
Thermal resistance, junction - ambient RthJA 89.2 ℃/W Mounted on a FR4 (25×25×0.8mm) 2
Drain - Source breakdown voltage V(BR)DSS -45 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current IDSS -1 μA VDS = -45V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) -1 -2.5 V VDS = -10V, ID = -1mA 2
Static drain - source on - state resistance RDS(on) 19 27 mΩ VGS = -10V, ID = -7.0A (pulsed) 2
Static drain - source on - state resistance RDS(on) 25 35 mΩ VGS = -4.5V, ID = -7.0A (pulsed) 2
Static drain - source on - state resistance RDS(on) 28 39 mΩ VGS = -4.0V, ID = -7.0A (pulsed) 2
Forward transfer admittance /Yfs/ 10 S VDS = -10V, ID = -7.0A (pulsed) 2
Total gate charge Qg 34 47.6 nC VDD ⋍ -25V, ID = -7.0A, VGS = 5V 3
Continuous forward current IS -1.6 A Ta = 25℃ 3
Pulse forward current ISP -28 A Pw≦10μs, Duty cycle≦1% 3
Forward voltage VSD -1.2 V VGS = 0V, IS = -7.0A 3

CAD (KiCad official)

  • Symbol: RSH070P05GZETB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: rsh070p05gzetb-etched.step / rsh070p05gzetb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rsh070p05gzetb.step / rsh070p05gzetb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (14 pp, sha256 b6a542b9bd79721c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF