component
RSF010P05TL
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRSF010P05TL
ROHM Semicon · MOSFETs · SOT-323
RSF010P05TL from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limited to ±20 V (VGSS), threshold -1.0 to -2.5 V at ID = -1 mA, with an ESD protection diode inside. |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; body diode continuous forward current is -0.6 A (IS), with a -4 A pulse rating. |
| 3 | Drain | passive | Drain terminal; drain-source voltage -45 V, continuous drain current ±1 A, pulsed ±4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | -45 | V | Ta=25°C | 1 | ||
| Continuous drain current | ID | -1 | 1 | A | Ta=25°C | 1 | |
| Pulsed drain current | IDP | -4 | 4 | A | Pw≦10μs, Duty cycle≦1% | 1 | |
| Gate-Source voltage | VGSS | -20 | 20 | V | Ta=25°C | 1 | |
| Power dissipation (ceramic board) | PD | 0.8 | W | Mounted on a ceramic board (30x30x0.8mm) | 1 | ||
| Power dissipation (FR4) | PD | 0.75 | W | Mounted on a FR4 (25x25x0.8mm, Cu pad 625mm2) | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance junction-ambient (ceramic board) | RthJA | 156 | °C/W | Mounted on a ceramic board (30x30x0.8mm) | 2 | ||
| Thermal resistance junction-ambient (FR4) | RthJA | 167 | °C/W | Mounted on a FR4 (25x25x0.8mm, Cu pad 625mm2) | 2 | ||
| Drain-Source breakdown voltage | V(BR)DSS | -45 | V | VGS = 0V, ID = -1mA | 2 | ||
| Zero gate voltage drain current | IDSS | -1 | μA | VDS = -45V, VGS = 0V | 2 | ||
| Gate-Source leakage current | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | -1 | -2.5 | V | VDS = -10V, ID = -1mA | 2 | |
| Static drain-source on-state resistance | RDS(on) | 330 | 460 | mΩ | VGS = -10V, ID = -1A, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 450 | 630 | mΩ | VGS = -4.5V, ID = -0.5A, pulsed | 2 | |
| Static drain-source on-state resistance | RDS(on) | 490 | 690 | mΩ | VGS = -4V, ID = -0.5A, pulsed | 2 | |
| Forward transfer admittance | /Yfs/ | 1 | S | VDS = -10V, ID = -1A, pulsed | 2 | ||
| Body diode continuous forward current | IS | -0.6 | A | Ta = 25℃ | 3 | ||
| Body diode pulse forward current | ISP | -4 | A | Pw≦10μs, Duty cycle≦1% | 3 | ||
| Body diode forward voltage | VSD | -1.2 | V | VGS = 0V, IS = -1A, pulsed | 3 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | -50 | mV/℃ | ID = -1mA referenced to 25℃ | 2 | ||
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | 3.3 | mV/℃ | ID = -1mA referenced to 25℃ | 2 | ||
| Gate resistance | RG | 12 | Ω | f = 1MHz, open drain | 2 | ||
| Input capacitance | Ciss | 160 | pF | VGS = 0V, VDS = -10V, f = 1MHz | 3 | ||
| Output capacitance | Coss | 40 | pF | VGS = 0V, VDS = -10V, f = 1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 17 | pF | VGS = 0V, VDS = -10V, f = 1MHz | 3 | ||
| Turn-on delay time | td(on) | 6 | ns | VDD ⋍ -25V, VGS = -10V, ID = -0.5A, RL ⋍ 50Ω, RG = 10Ω | 3 | ||
| Rise time | tr | 4 | ns | VDD ⋍ -25V, VGS = -10V, ID = -0.5A, RL ⋍ 50Ω, RG = 10Ω | 3 | ||
| Turn-off delay time | td(off) | 18 | ns | VDD ⋍ -25V, VGS = -10V, ID = -0.5A, RL ⋍ 50Ω, RG = 10Ω | 3 | ||
| Fall time | tf | 6 | ns | VDD ⋍ -25V, VGS = -10V, ID = -0.5A, RL ⋍ 50Ω, RG = 10Ω | 3 | ||
| Total gate charge | Qg | 2.3 | nC | VDD ⋍ -25V, ID = -1A, VGS = -5V | 3 | ||
| Gate-Source charge | Qgs | 0.9 | nC | VDD ⋍ -25V, ID = -1A, VGS = -5V | 3 | ||
| Gate-Drain charge | Qgd | 0.6 | nC | VDD ⋍ -25V, ID = -1A, VGS = -5V | 3 |
CAD (KiCad official)
- Symbol:
RSF010P05TL - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
rsf010p05tl-etched.step/rsf010p05tl-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rsf010p05tl.step/rsf010p05tl.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (13 pp, sha256
92c535e6f5694364, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).