# RS6G120BGTB1

**ROHM Semicon** · MOSFETs · HSOP-8

RS6G120BGTB1 from ROHM Semicon, in a HSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the Nch MOSFET, tied internally to pins 2 and 3. |
| 2 | Source | passive | Source terminal of the Nch MOSFET, tied internally to pins 1 and 3. |
| 3 | Source | passive | Source terminal of the Nch MOSFET, tied internally to pins 1 and 2. |
| 4 | Gate | input | Gate terminal with a maximum gate-source voltage of ±20V and a threshold of 1.0 to 2.5V. |
| 5 | Drain | passive | Drain terminal (40V VDSS), tied internally to pins 6, 7 and 8. |
| 6 | Drain | passive | Drain terminal (40V VDSS), tied internally to pins 5, 7 and 8. |
| 7 | Drain | passive | Drain terminal (40V VDSS), tied internally to pins 5, 6 and 8. |
| 8 | Drain | passive | Drain terminal (40V VDSS), tied internally to pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | HSOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS |  |  | 40 | V |  | 1 |
| Continuous drain current (silicon limit) | ID | -210 |  | 210 | A | Silicon limit (VGS=10V) | 1 |
| Continuous drain current | ID | -120 |  | 120 | A | Tc = 25°C (VGS=10V) | 1 |
| Pulsed drain current | IDP | -840 |  | 840 | A | *3 Pw ≤ 10μs, Duty cycle ≤ 1% | 1 |
| Gate - Source voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Avalanche current, single pulse | IAS |  |  | 50 | A | *4 L ⋍ 0.1mH, VDD = 20V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2 | 1 |
| Avalanche energy, single pulse | EAS |  |  | 187 | mJ | *4 L ⋍ 0.1mH, VDD = 20V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2 | 1 |
| Power dissipation | PD |  |  | 104 | W | *2 Tc=25℃ | 1 |
| Power dissipation | PD |  |  | 3 | W | *5 Mounted on a Cu board (40×40×0.8mm) | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Operating junction and storage temperature range | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction - case | RthJC |  |  | 1.2 | ℃/W | *2 Tc=25℃, Limited only by maximum temperature allowed | 2 |
| Thermal resistance, junction - ambient | RthJA |  |  | 41.7 | ℃/W | *5 Mounted on a Cu board (40×40×0.8mm) | 2 |
| Drain - Source breakdown voltage | V(BR)DSS | 40 |  |  | V | VGS = 0V, ID = 1mA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 2 | μA | VDS = 40V, VGS = 0V | 2 |
| Gate - Source leakage current | IGSS | -200 |  | 200 | nA | VGS = ±20V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 1 |  | 2.5 | V | VDS = VGS, ID = 1mA | 2 |
| Static drain - source on - state resistance | RDS(on) |  | 1.03 | 1.34 | mΩ | VGS = 10V, ID = 90A | 2 |
| Static drain - source on - state resistance | RDS(on) |  | 1.74 | 2.43 | mΩ | VGS = 4.5V, ID = 60A | 2 |
| Forward Transfer Admittance | /Yfs/ | 50 |  |  | S | VDS = 5V, ID = 60A | 2 |
| Continuous forward current | IS |  |  | 85 | A | Ta = 25℃ | 3 |
| Pulse forward current | ISP |  |  | 840 | A | *3 Pw ≤ 10μs, Duty cycle ≤ 1% | 3 |
| Forward voltage | VSD |  |  | 1.2 | V | VGS = 0V, IS = 85A | 3 |

## CAD (KiCad official)

- Symbol: `RS6G120BGTB1`
- Footprint: `Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm`
- 3D model: HSOP-8 (KiCad packages3D, STEP)
- 3D model files: `rs6g120bgtb1-etched.step` / `rs6g120bgtb1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs6g120bgtb1.step` / `rs6g120bgtb1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](docs/rs6g120bgtb1-datasheet.pdf) (13 pp, sha256 `d59a5b8f22ee8162`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rs6g120bgtb1-datasheet.pdf)