component
RS65R600D
Public Made by Adomby adom
REASUNOS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RS65R600D
REASUNOS · MOSFETs · TO-252
RS65R600D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the MOSFET, with a VGS rating of ±30 V and a gate threshold voltage of 2 V to 4 V at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain, connected to the exposed tab (center lead is a short stub); VDSS is 650 V and continuous ID is 7.3 A at TC=25℃. |
| 3 | S | passive | Source; the integral body diode carries up to 7.3 A continuous (IS) with a forward voltage of 1.4 V max at IS=7.3 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 650 | V | 1 | |||
| Continuous Drain Current | ID | 7.3 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 4.5 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 24 | A | Repetitive rating, pulse width limited by maximum junction temperature (Note*1) | 1 | ||
| Power Dissipation | PD | 60 | W | 1 | |||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 129 | mJ | L=10mH,VDS= 50V, RG = 25 Ω, TC=25℃ | 1 | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS = 0…400V | 1 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS = 0…400V, Tj = 25℃, ISD≤ID | 1 | ||
| Maximum Temperature for Soldering, leads at 0.063in (1.6mm) from case for 10 seconds | TL | 300 | ℃ | Leads at 0.063in(1.6mm) from case for 10 seconds | 1 | ||
| Maximum Temperature for Soldering, package body for 10 seconds | TPKG | 260 | ℃ | Package body for 10 seconds | 1 | ||
| Operating Junction and Storage Temperature Range | TJ and TSTG | -55 | 150 | ℃ | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 2.1 | ℃/ W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/ W | 1 cubic foot chamber, free air | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0 | 2 | ||
| Gate-to-Source Forward Leakage Current | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage Current | IGSS | -100 | nA | VGS=-30V, VDS=0 | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 520 | 600 | mΩ | VGS=10V, ID=2A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VGS=VDS, ID=250µA | 2 | |
| Continuous Source Current | IS | 7.3 | A | 3 | |||
| Maximum Pulsed Current | ISM | 24 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.4 | V | IS=7.3A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
RS65R600D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
rs65r600d-etched.step/rs65r600d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs65r600d.step/rs65r600d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (8 pp, sha256
78982ffb9ad389a3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RS65R600D
**REASUNOS** · MOSFETs · TO-252
RS65R600D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the MOSFET, with a VGS rating of ±30 V and a gate threshold voltage of 2 V to 4 V at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain, connected to the exposed tab (center lead is a short stub); VDSS is 650 V and continuous ID is 7.3 A at TC=25℃. |
| 3 | S | passive | Source; the integral body diode carries up to 7.3 A continuous (IS) with a forward voltage of 1.4 V max at IS=7.3 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 650 | V | | 1 |
| Continuous Drain Current | ID | | | 7.3 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 4.5 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 24 | A | Repetitive rating, pulse width limited by maximum junction temperature (Note*1) | 1 |
| Power Dissipation | PD | | | 60 | W | | 1 |
| Gate-to-Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 129 | mJ | L=10mH,VDS= 50V, RG = 25 Ω, TC=25℃ | 1 |
| MOSFET dv/dt ruggedness | dv/dt | | | 50 | V/ns | VDS = 0…400V | 1 |
| Reverse diode dv/dt | dv/dt | | | 15 | V/ns | VDS = 0…400V, Tj = 25℃, ISD≤ID | 1 |
| Maximum Temperature for Soldering, leads at 0.063in (1.6mm) from case for 10 seconds | TL | | | 300 | ℃ | Leads at 0.063in(1.6mm) from case for 10 seconds | 1 |
| Maximum Temperature for Soldering, package body for 10 seconds | TPKG | | | 260 | ℃ | Package body for 10 seconds | 1 |
| Operating Junction and Storage Temperature Range | TJ and TSTG | -55 | | 150 | ℃ | | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | 2.1 | | ℃/ W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | 62.5 | | ℃/ W | 1 cubic foot chamber, free air | 2 |
| Drain-to-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS=0V, ID=250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | µA | VDS=650V, VGS=0 | 2 |
| Gate-to-Source Forward Leakage Current | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate-to-Source Reverse Leakage Current | IGSS | | | -100 | nA | VGS=-30V, VDS=0 | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 520 | 600 | mΩ | VGS=10V, ID=2A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VGS=VDS, ID=250µA | 2 |
| Continuous Source Current | IS | | | 7.3 | A | | 3 |
| Maximum Pulsed Current | ISM | | | 24 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.4 | V | IS=7.3A, VGS=0V | 3 |
## CAD (KiCad official)
- Symbol: `RS65R600D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `rs65r600d-etched.step` / `rs65r600d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs65r600d.step` / `rs65r600d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [REASUNOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603096745706602496) (8 pp, sha256 `78982ffb9ad389a3`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rs65r600d-datasheet.pdf)