# RS65R190T

**REASUNOS** · MOSFETs · TO-220

RS65R190T from REASUNOS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated at ±30 V maximum, with a gate threshold voltage of 2 V to 4 V at VGS=VDS, ID=250µA. |
| 2 | D | passive | Drain; drain-to-source voltage is rated at 650 V, with continuous drain current of 20 A at TC=25℃ and pulsed drain current of 60 A. |
| 3 | S | passive | Source; continuous source (body diode) current is 20 A maximum and pulsed source current is 60 A maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 20 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 13 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 60 | A |  | 1 |
| Power Dissipation | PD |  |  | 134 | W |  | 1 |
| Gate-to-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 310 | mJ | L=10mH,VDS= 50V, RG = 25 Ω, TC=25℃ | 1 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VDS = 0…400V | 1 |
| Reverse diode dv/dt | dv/dt |  |  | 15 | V/ns | VDS = 0…400V, Tj = 25℃, ISD≤ID | 1 |
| Maximum Temperature for Soldering Leads | TL |  |  | 300 | ℃ | Leads at 0.063in(1.6mm) from Case for 10 seconds | 1 |
| Maximum Temperature for Soldering Package Body | TPKG |  |  | 260 | ℃ | Package Body for 10 seconds | 1 |
| Operating Junction and Storage Temperature Range | TJ and TSTG | -55 |  | 150 | ℃ |  | 1 |
| Junction-to-Case Thermal Resistance | RθJC |  |  | 0.93 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 62.5 | ℃/W | 1 cubic foot chamber, free air | 2 |
| Drain-to-Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 1 | µA | VDS=650V, VGS=0 | 2 |
| Gate-to-Source Forward Leakage Current | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate-to-Source Reverse Leakage Current | IGSS |  |  | -100 | nA | VGS=-30V, VDS=0 | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 160 | 190 | mΩ | VGS=10V, ID=10A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VGS=VDS, ID=250µA | 2 |
| Continuous Source Current | IS |  |  | 20 | A | Integral pn- diode | 3 |
| Maximum Pulsed Current | ISM |  |  | 60 | A | in MOSFET | 3 |
| Diode Forward Voltage | VSD |  |  | 1.4 | V | IS=20A, VGS=0V | 3 |

## CAD (KiCad official)

- Symbol: `RS65R190T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `rs65r190t-etched.step` / `rs65r190t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs65r190t.step` / `rs65r190t.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [REASUNOS datasheet](docs/rs65r190t-datasheet.pdf) (8 pp, sha256 `77a4cd5f155e93cb`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/rs65r190t-datasheet.pdf)