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RS5N50D

Public Made by Adom

by adom

REASUNOS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RS5N50D

REASUNOS · MOSFETs · TO-252

RS5N50D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated at ±30 V maximum and a threshold of 2 to 4 V at ID=250µA.
2 D passive Drain, the trimmed centre lead, which is also the exposed metal tab; VDSS is 500 V and continuous ID is 5 A at TC=25℃.
3 S passive Source; carries the 5 A continuous source (body-diode) current IS and the 20 A pulsed current.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage BVDSS 500 V VGS=0V, ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=500V, VGS=0V 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS=30V, VDS=0V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-30V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(on) 1.25 1.45 Ω VGS=10V, ID=2.5A 2
Gate Threshold Voltage VGS(TH) 2 3 4 V VGS=VDS, ID=250µA 2
Continuous Source Current IS 5 A Integral pn-diode in MOSFET 3
Maximum Pulsed Current ISM 20 A Integral pn-diode in MOSFET 3
Diode Forward Voltage VSD 1.4 V IS=5A, VGS=0V 3
Drain-to-Source Voltage VDSS 500 V Tc=25℃ 1
Continuous Drain Current ID 5 A TC=25℃ 1
Continuous Drain Current ID 3 A TC=100℃ 1
Pulsed Drain Current IDM 20 A 1
Power Dissipation PD 52 W Tc=25℃ 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 200 mJ L=10mH, VDD=50V, RG=25Ω 1
Maximum Soldering Temperature, Leads TL 300 ℃ Leads at 0.063in(1.6mm) from case for 10 seconds 1
Maximum Soldering Temperature, Package TPKG 260 ℃ Package body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 2.6 ℃/W Drain lead soldered to water cooled heatsink, PD adjusted for peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 62 ℃/W 1 cubic foot chamber, free air 2
Turn-on Delay Time td(ON) 24 nS VDS=250V, ID=5A, RG=10Ω 2
Rise Time trise 18 nS VDS=250V, ID=5A, RG=10Ω 2
Turn-off Delay Time td(OFF) 52 nS VDS=250V, ID=5A, RG=10Ω 2
Fall Time tfall 31 nS VDS=250V, ID=5A, RG=10Ω 2
Input Capacitance Ciss 478 pF VGS=0V, VDS=25V, f=1.0MHz 3
Output Capacitance Coss 55 pF VGS=0V, VDS=25V, f=1.0MHz 3
Reverse Transfer Capacitance Crss 6.7 pF VGS=0V, VDS=25V, f=1.0MHz 3
Total Gate Charge Qg 16 nC VDS=400V, ID=5A, VGS=10V 3
Gate-to-Source Charge Qgs 3.5 nC VDS=400V, ID=5A, VGS=10V 3
Gate-to-Drain (Miller) Charge Qgd 5.5 nC VDS=400V, ID=5A, VGS=10V 3
Reverse Recovery Time trr 408 nS VR=400V, IF=5A, di/dt=100A/µs 3
Reverse Recovery Charge Qrr 1.5 µC VR=400V, IF=5A, di/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: RS5N50D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: rs5n50d-etched.step / rs5n50d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs5n50d.step / rs5n50d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (8 pp, sha256 b48783f2b7f4daf1, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF