component
RS40N200S
Public Made by Adomby adom
REASUNOS MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRS40N200S
REASUNOS · MOSFETs · TO-263
RS40N200S from REASUNOS, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is limited to ±20 V, with a threshold of 1.0 V min to 2.5 V max at ID=250 µA. |
| 2 | D | passive | Drain, also the exposed tab (middle lead is trimmed or short); rated 40 V VDSS and 200 A continuous at TC=25℃ (800 A pulsed). |
| 3 | S | passive | Source; carries up to 200 A continuous at TC=25℃ and 200 A continuous body-diode current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V | 1 | |||
| Continuous Drain Current | ID | 200 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 125 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 800 | A | 1 | |||
| Power Dissipation | PD | 200 | W | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 750 | mJ | L = 0.5mH, VDD = 15V, RG = 25Ω, Tj = 25℃ | 1 | ||
| Maximum Temperature for Soldering, leads | TL | 300 | ℃ | Leads at 0.063in (1.6mm) from case for 10 seconds | 1 | ||
| Maximum Temperature for Soldering, package body | TPKG | 260 | ℃ | Package body for 10 seconds | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=40V, VGS=0V | 2 | ||
| Gate-to-Source Forward Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage Current | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 1.8 | 2.5 | mΩ | VGS=10V, ID=30A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 2.1 | 2.7 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.65 | 2.5 | V | VGS=VDS, ID=250µA | 2 |
| Continuous Source Current | IS | 200 | A | Integral pn-diode in MOSFET | 3 | ||
| Maximum Pulsed Current | ISM | 800 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | IS=30A, VGS=0V | 3 | ||
| Junction-to-Case Thermal Resistance | RθJC | 0.76 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/W | 1 cubic foot chamber, free air | 2 |
CAD (KiCad official)
- Symbol:
RS40N200S - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
rs40n200s-etched.step/rs40n200s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs40n200s.step/rs40n200s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (9 pp, sha256
0f4e8ce43aba2af1, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).