component
RS40N120T
Public Made by Adomby adom
REASUNOS MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRS40N120T
REASUNOS · MOSFETs · TO-220
RS40N120T from REASUNOS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with a VGS rating of ±20 V and a gate threshold of 1.0 to 2.5 V at ID=250µA. |
| 2 | D | passive | Drain, also connected to the mounting tab; VDSS is 40 V and continuous drain current is 120 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current is 120 A through the integral pn diode, with VSD up to 1.2 V at IS=15A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V,ID=250µA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=40V,VGS=0V | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V,VDS=0V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V,VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 2.8 | 3.5 | mΩ | VGS=10V,ID=15A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(on) | 4 | 4.8 | mΩ | VGS=4.5V,ID=10A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 2.5 | V | VGS=VDS,ID=250µA | 2 | |
| Continuous Source Current | IS | 120 | A | Integral pn-diode in MOSFET | 3 | ||
| Maximum Pulsed Current | ISM | 390 | A | Integral pn-diode in MOSFET | 3 | ||
| Diode Forward Voltage | VSD | 1.2 | V | IS=15A,VGS=0V | 3 | ||
| Drain-to-Source Voltage | VDSS | 40 | V | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 120 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 76 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 390 | A | 1 | |||
| Power Dissipation | PD | 110 | W | Tc=25℃ | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 272 | mJ | L = 0.5mH,VDD = 40V, VG = 10V, Tj = 25℃ | 1 | ||
| Maximum Soldering Temperature, Leads | TL | 300 | ℃ | Leads at 0.063in(1.6mm) from Case for 10 seconds | 1 | ||
| Maximum Soldering Temperature, Package Body | TPKG | 260 | ℃ | Package Body for 10 seconds | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 1.14 | ℃/W | Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 20 | ℃/W | 1 cubic foot chamber, free air | 2 | ||
| Turn-on Delay Time | td(ON) | 12 | nS | VDS=20V ID=20A RG=25Ω VGS=10V | 2 | ||
| Rise Time | trise | 54 | nS | VDS=20V ID=20A RG=25Ω VGS=10V | 2 | ||
| Turn-OFF Delay Time | td(OFF) | 120 | nS | VDS=20V ID=20A RG=25Ω VGS=10V | 2 | ||
| Fall Time | tfall | 80 | nS | VDS=20V ID=20A RG=25Ω VGS=10V | 2 | ||
| Input Capacitance | Ciss | 4645 | pF | VGS=0V, VDS=20V, f=1.0MHz | 3 | ||
| Output Capacitance | Coss | 436 | pF | VGS=0V, VDS=20V, f=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 360 | pF | VGS=0V, VDS=20V, f=1.0MHz | 3 | ||
| Total Gate Charge | Qg | 102 | nC | VDS=20V, ID=20A, VGS=10V | 3 | ||
| Total Gate Charge (second row) | Qg | 49 | nC | VDS=20V, ID=20A, VGS=10V | 3 | ||
| Gate-to-Source Charge | Qgs | 15.8 | nC | VDS=20V, ID=20A, VGS=10V | 3 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 21.9 | nC | VDS=20V, ID=20A, VGS=10V | 3 | ||
| Reverse Recovery Time | trr | 22.3 | nS | VGS=0V, IS=20A, di/dt=100A/µs | 3 | ||
| Reverse Recovery Charge | Qrr | 7.4 | nC | VGS=0V, IS=20A, di/dt=100A/µs | 3 |
CAD (KiCad official)
- Symbol:
RS40N120T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
rs40n120t-etched.step/rs40n120t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs40n120t.step/rs40n120t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (9 pp, sha256
efbe63edbbb2b1ef, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).