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RS3G34XM

Jiangsu RUNIC Tech · Logic Gates · MSOP-8

RS3G34XM from Jiangsu RUNIC Tech, in a MSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1A input Input 1 of the first buffer gate (Y = A); inputs accept voltages up to 5.5 V regardless of VCC.
2 3Y output Output 3 of the third buffer gate (Y = A), with high output drive of ±24 mA at VCC = 3.0 V.
3 2A input Input 2 of the second buffer gate (Y = A); inputs accept voltages up to 5.5 V regardless of VCC.
4 GND power_in Ground reference pin for the device.
5 2Y output Output 2 of the second buffer gate (Y = A), with high output drive of ±24 mA at VCC = 3.0 V.
6 3A input Input 3 of the third buffer gate (Y = A); inputs accept voltages up to 5.5 V regardless of VCC.
7 1Y output Output 1 of the first buffer gate (Y = A), with high output drive of ±24 mA at VCC = 3.0 V.
8 VCC power_in Supply pin; the device is specified for operation from 1.65 V to 5.5 V.

Key specifications

Parameter Value
Manufacturer Jiangsu RUNIC Tech
Package MSOP-8
Category Logic
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage range (absolute maximum) VCC -0.5 6.5 V 6
Input voltage range (absolute maximum) VI -0.5 6.5 V 6
Voltage applied to any output in high-impedance or power-off state Vo -0.5 6.5 V 6
Input clamp current IIK -50 mA VI<0 6
Output clamp current IOK -50 mA VO<0 6
Continuous output current IO -50 50 mA 6
Continuous current through VCC or GND -100 100 mA 6
Package thermal impedance, MSOP8 θJA 170 °C/W MSOP8 package, per JESD-51 6
Junction temperature TJ -65 150 °C 6
Storage temperature Tstg -65 150 °C 6
Electrostatic discharge, Human-Body Model V(ESD) -4000 4000 V HBM, ANSI/ESDA/JEDEC JS-001 6
Electrostatic discharge, Charged-Device Model V(ESD) -1500 1500 V CDM, ANSI/ESDA/JEDEC JS-002 6
Electrostatic discharge, Machine Model V(ESD) -500 500 V MM 6
Supply voltage, operating VCC 1.65 5.5 V Operating 7
Supply voltage, data retention only VCC 1.5 V Data retention only 7
High-level input voltage VIH 1.7 V VCC=2.3V to 2.7V 7
High-level input voltage VIH 2 V VCC=3V to 3.6V 7
Low-level input voltage VIL 0.7 V VCC=2.3V to 2.7V 7
Low-level input voltage VIL 0.8 V VCC=3V to 3.6V 7
Input voltage VI 0 5.5 V 7
Output voltage VO 0 V 7
Input transition rise or fall rate Δt/Δv 20 ns/V VCC=1.8V ± 0.15V, 2.5V ± 0.2V 7
Input transition rise or fall rate Δt/Δv 10 ns/V VCC=3.3V ± 0.3V 7
Input transition rise or fall rate Δt/Δv 5 ns/V VCC=5V ± 0.5V 7
Operating temperature TA -40 125 °C 7
High-level output voltage VOH 1.2 V IOH = -4mA; VCC=1.65V 8
High-level output voltage VOH 1.9 V IOH = -8mA; VCC=2.3V 8
High-level output voltage VOH 2.4 V IOH = -16mA; VCC=3V 8
High-level output voltage VOH 2.3 V IOH = -24mA; VCC=3V (merged cell) 8
High-level output voltage VOH 3.8 V IOH = -32mA; VCC=4.5V 8
Low-level output voltage VOL 0.1 V IOL = 100μA; VCC 1.65V to 5.5V 8
Low-level output voltage VOL 0.45 V IOL = 4mA; VCC=1.65V 8
Low-level output voltage VOL 0.3 V IOL = 8mA; VCC=2.3V 8
Low-level output voltage VOL 0.4 V IOL = 16mA; VCC=3V 8
Low-level output voltage VOL 0.55 V IOL = 24mA; VCC=3V (merged cell) 8
Input leakage current, A inputs II -1 1 µA VI=5.5V or GND; VCC 0V to 5.5V; +25°C 8
Input leakage current, A inputs II -5 5 µA VI=5.5V or GND; VCC 0V to 5.5V; Full temperature range 8
Power-off leakage current Ioff -1 1 µA VI or VO=5.5V; VCC=0V; +25°C 8
Power-off leakage current Ioff -10 10 µA VI or VO=5.5V; VCC=0V; Full temperature range 8
Quiescent supply current ICC 1 µA VI=5.5V or GND; IO=0; VCC 1.65V to 5.5V; +25°C 8
Quiescent supply current ICC 10 µA VI=5.5V or GND; IO=0; VCC 1.65V to 5.5V; Full temperature range 8
Additional quiescent supply current per input ΔICC 500 µA One input at VCC-0.6V; other inputs at VCC or GND; VCC 3V to 5.5V; Full temperature range 8
Propagation delay tpd 13.7 ns VCC=1.8V±0.15V; CL=30pF, RL=1kΩ 8
Propagation delay tpd 5.5 ns VCC=2.5V±0.2V; CL=30pF, RL=500Ω 8
Propagation delay tpd 4.3 ns VCC=3.3V±0.3V; CL=50pF, RL=500Ω 8
Propagation delay tpd 3.6 ns VCC=5V±0.5V; CL=50pF, RL=500Ω 8

CAD (KiCad official)

  • Symbol: RS3G34XM
  • Footprint: Package_SO:MSOP-8_3x3mm_P0.65mm
  • 3D model: MSOP-8 (KiCad packages3D, STEP)
  • 3D model files: rs3g34xm-etched.step / rs3g34xm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs3g34xm.step / rs3g34xm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu RUNIC Tech datasheet (16 pp, sha256 2618f021e2e165a0, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF