component
RS3400E
Public Made by Adomby adom
REASUNOS MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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RS3400E
REASUNOS · MOSFETs · SOT-23
RS3400E from REASUNOS, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of 0.7 V min to 1.4 V max at VDS=VGS, ID=250µA. |
| 2 | S | passive | Source; connects to the body diode anode, and the continuous drain current is rated 5.8 A. |
| 3 | D | passive | Drain; drain-source voltage rated 30 V, continuous drain current 5.8 A and pulsed drain current 30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 5.8 | A | 1 | |||
| Pulsed Drain Current | IDM | 30 | A | Repetitive rating: pulse width limited by maximum junction temperature (note 1) | 1 | ||
| Power Dissipation | PD | 0.35 | W | 1 | |||
| Junction Temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | ℃/W | Surface mounted on FR4 board, t < 5 sec (note 2) | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | VGS = 0V, ID=250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | A | VDS=24V,VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -0.1 | 0.1 | A | VGS =±12V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 0.7 | 1.4 | V | VDS =VGS, ID =250µA | 2 | |
| Drain-source on-resistance | RDS(on) | 27 | 35 | Ω | VGS =10V, ID =5.8A | 2 | |
| Drain-source on-resistance | RDS(on) | 29 | 40 | Ω | VGS =4.5V, ID =5A | 2 | |
| Drain-source on-resistance | RDS(on) | 38 | 52 | Ω | VGS =2.5V, ID =4A | 2 | |
| Forward transconductance | FS | 8 | S | VDS =5V, ID =5A | 2 | ||
| Input Capacitance | Ciss | 1050 | F | VDS =15V,VGS =0V,f =1MHz | 2 | ||
| Output Capacitance | Coss | 99 | F | 2 | |||
| Reverse Transfer Capacitance | Crss | 77 | F | 2 | |||
| Gate resistance | Rg | 3.6 | Ω | VDS=0V,VGS=0V, f =1MHz | 2 | ||
| Turn-on delay time | td(on) | 5 | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 2 | ||
| Turn-on rise time | tr | 7 | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 2 | ||
| Turn-off delay time | td(off) | 40 | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 2 | ||
| Turn-off fall time | tf | 6 | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 2 | ||
| Diode Forward voltage | VDS | 1 | V | VGS =0V, IS=1A | 2 |
CAD (KiCad official)
- Symbol:
RS3400E - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
rs3400e-etched.step/rs3400e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rs3400e.step/rs3400e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: REASUNOS datasheet (6 pp, sha256
21adaad584c8d8c4, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# RS3400E
**REASUNOS** · MOSFETs · SOT-23
RS3400E from REASUNOS, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of 0.7 V min to 1.4 V max at VDS=VGS, ID=250µA. |
| 2 | S | passive | Source; connects to the body diode anode, and the continuous drain current is rated 5.8 A. |
| 3 | D | passive | Drain; drain-source voltage rated 30 V, continuous drain current 5.8 A and pulsed drain current 30 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | REASUNOS |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | 5.8 | A | | 1 |
| Pulsed Drain Current | IDM | | | 30 | A | Repetitive rating: pulse width limited by maximum junction temperature (note 1) | 1 |
| Power Dissipation | PD | | | 0.35 | W | | 1 |
| Junction Temperature | TJ | -55 | | 150 | ℃ | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 357 | ℃/W | Surface mounted on FR4 board, t < 5 sec (note 2) | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 30 | | | V | VGS = 0V, ID=250µA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | A | VDS=24V,VGS = 0V | 2 |
| Gate-body leakage current | IGSS | -0.1 | | 0.1 | A | VGS =±12V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 0.7 | | 1.4 | V | VDS =VGS, ID =250µA | 2 |
| Drain-source on-resistance | RDS(on) | | 27 | 35 | Ω | VGS =10V, ID =5.8A | 2 |
| Drain-source on-resistance | RDS(on) | | 29 | 40 | Ω | VGS =4.5V, ID =5A | 2 |
| Drain-source on-resistance | RDS(on) | | 38 | 52 | Ω | VGS =2.5V, ID =4A | 2 |
| Forward transconductance | FS | | 8 | | S | VDS =5V, ID =5A | 2 |
| Input Capacitance | Ciss | | 1050 | | F | VDS =15V,VGS =0V,f =1MHz | 2 |
| Output Capacitance | Coss | | 99 | | F | | 2 |
| Reverse Transfer Capacitance | Crss | | 77 | | F | | 2 |
| Gate resistance | Rg | | 3.6 | | Ω | VDS=0V,VGS=0V, f =1MHz | 2 |
| Turn-on delay time | td(on) | | 5 | | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 2 |
| Turn-on rise time | tr | | 7 | | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 2 |
| Turn-off delay time | td(off) | | 40 | | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 2 |
| Turn-off fall time | tf | | 6 | | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω | 2 |
| Diode Forward voltage | VDS | | 1 | | V | VGS =0V, IS=1A | 2 |
## CAD (KiCad official)
- Symbol: `RS3400E`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `rs3400e-etched.step` / `rs3400e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `rs3400e.step` / `rs3400e.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [REASUNOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603132124023173120) (6 pp, sha256 `21adaad584c8d8c4`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/rs3400e-datasheet.pdf)