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RS30N86D

Public Made by Adom

by adom

REASUNOS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RS30N86D

REASUNOS · MOSFETs · TO-252

RS30N86D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and a threshold of 1.0 V min to 3.0 V max at ID=250µA.
2 D passive Drain (center lead, also the metal tab); VDSS is 30 V and continuous ID is 86 A at TC=25℃.
3 S passive Source; continuous body-diode current IS is 86 A max, with pulsed current up to 170 A.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 30 V 1
Continuous Drain Current ID 86 A TC=25℃ 1
Continuous Drain Current ID 50 A TC=100℃ 1
Pulsed Drain Current IDM 170 A 1
Power Dissipation PD 83 W 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 306 mJ L = 0.5mH, VDD = 15V, RG = 25Ω, Tj = 25℃ 1
Maximum Temperature for Soldering, leads at 0.063in (1.6mm) from case for 10 seconds TL 300 ℃ Leads at 0.063in(1.6mm) from case for 10 seconds 1
Maximum Temperature for Soldering, package body for 10 seconds TPKG 260 ℃ Package body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ and TSTG -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 1.8 ℃/W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 60 ℃/W 1 cubic foot chamber, free air 2
Drain-to-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=30V, VGS=0V 2
Gate-to-Source Forward Leakage Current IGSS 100 nA VGS=20V, VDS=0V 2
Gate-to-Source Reverse Leakage Current IGSS -100 nA VGS=-20V, VDS=0 2
Static Drain-to-Source On-Resistance RDS(on) 4.7 5.5 mΩ VGS=10V, ID=30A 2
Static Drain-to-Source On-Resistance RDS(on) 7.8 11 mΩ VGS=4.5V, ID=24A 2
Gate Threshold Voltage VGS(TH) 1 1.5 3 V VGS=VDS, ID=250µA 2
Continuous Source Current IS 86 A Integral pn-diode in MOSFET 3
Maximum Pulsed Current ISM 170 A 3
Diode Forward Voltage VSD 1.2 V IS=24A, VGS=0V 3
Reverse Recovery Time trr 32 50 nS VGS=0V, IS=80A, di/dt=100A/µs 3
Reverse Recovery Charge Qrr 12 20 nC VGS=0V, IS=80A, di/dt=100A/µs 3

CAD (KiCad official)

  • Symbol: RS30N86D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: rs30n86d-etched.step / rs30n86d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs30n86d.step / rs30n86d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (9 pp, sha256 f2cec1d97bb10da2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF