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RS30N180D

Public Made by Adom

by adom

REASUNOS MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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RS30N180D

REASUNOS · MOSFETs · TO-252

RS30N180D from REASUNOS, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is rated at ±20 V maximum, with a typical threshold of 1.9 V (1.3 to 2.5 V) at ID=250µA.
2 D passive Drain (middle lead, internally common with the exposed drain tab); rated 30 V drain-to-source, 180 A continuous at TC=25℃ and 720 A pulsed.
3 S passive Source; carries up to 180 A continuous source current through the integral body diode (VSD max 1.2 V at IS=30A).

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 30 V 1
Continuous Drain Current ID 180 A TC=25℃ 1
Continuous Drain Current ID 114 A TC=100℃ 1
Pulsed Drain Current IDM 720 A 1
Power Dissipation PD 80 W 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 305 mJ L = 0.5mH, VDD = 15V, RG = 25Ω, Tj = 25℃ 1
Maximum Temperature for Soldering, leads TL 300 ℃ Leads at 0.063in (1.6mm) from case for 10 seconds 1
Maximum Temperature for Soldering, package body TPKG 260 ℃ Package body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Drain-to-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=30V, VGS=0V 2
Gate-to-Source Forward Leakage Current IGSS 100 nA VGS=20V, VDS=0V 2
Gate-to-Source Reverse Leakage Current IGSS -100 nA VGS=-20V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(on) 2 3 mΩ VGS=10V, ID=30A 2
Static Drain-to-Source On-Resistance RDS(on) 3.3 4.3 mΩ VGS=4.5V, ID=20A 2
Gate Threshold Voltage VGS(TH) 1.3 1.9 2.5 V VGS=VDS, ID=250µA 2
Continuous Source Current (body diode) IS 180 A Integral pn-diode in MOSFET 3
Maximum Pulsed Source Current (body diode) ISM 720 A 3
Diode Forward Voltage VSD 1.2 V IS=30A, VGS=0V 3
Junction-to-Case Thermal Resistance RθJC 2.1 ℃/W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 35 ℃/W 1 cubic foot chamber, free air 2

CAD (KiCad official)

  • Symbol: RS30N180D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: rs30n180d-etched.step / rs30n180d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs30n180d.step / rs30n180d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (9 pp, sha256 b4f8e4c58d5a3540, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF