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Contents

README

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RS20N50W

REASUNOS · MOSFETs · TO-247

RS20N50W from REASUNOS, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS limited to ±30 V and a threshold of 3 to 4 V at ID=250µA.
2 D passive Drain; rated for 500 V drain-to-source and 20 A continuous current at TC=25℃ (80 A pulsed), and connected to the mounting tab.
3 S passive Source; the current return path for the 20 A drain current, with the body diode in parallel from source to drain.

Key specifications

Parameter Value
Manufacturer REASUNOS
Package TO-247
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 500 V 1
Continuous Drain Current ID 20 A TC=25℃ 1
Pulsed Drain Current IDM 80 A Note*1 1
Power Dissipation PD 173 W 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 650 mJ L = 10mH, VDD = 50V, RG = 25Ω 1
Maximum Temperature for Soldering, leads TL 300 ℃ Leads at 0.063in(1.6mm) from case for 10 seconds 1
Maximum Temperature for Soldering, package body TPKG 260 ℃ Package body for 10 seconds 1
Operating Junction and Storage Temperature Range TJ and TSTG -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 0.72 ℃/W Drain lead soldered to water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ 2
Junction-to-Ambient Thermal Resistance RθJA 62.5 ℃/W 1 cubic foot chamber, free air 2
Drain-to-Source Breakdown Voltage BVDSS 500 V VGS=0V, ID=250µA 2
Drain-to-Source Leakage Current IDSS 1 µA VDS=500V, VGS=0V 2
Gate-to-Source Forward Leakage Current IGSS 100 nA VGS=30V, VDS=0V 2
Gate-to-Source Reverse Leakage Current IGSS -100 nA VGS=-30V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(on) 0.21 0.25 Ω VGS=10V, ID=10A 2
Gate Threshold Voltage VGS(TH) 3 4 V VGS=VDS, ID=250µA 2
Continuous Source Current IS 20 A Integral pn-diode in MOSFET 3
Maximum Pulsed Current ISM 80 A 3
Diode Forward Voltage VSD 1.2 V IS=10A, VGS=0V 3

CAD (KiCad official)

  • Symbol: RS20N50W
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: rs20n50w-etched.step / rs20n50w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs20n50w.step / rs20n50w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: REASUNOS datasheet (8 pp, sha256 50c94bcbe9d8b0fe, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF