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Contents

README

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RS1M_R1_00001

PANJIT International · Fast Recovery / High Efficiency Diodes · SMA(DO-214AC)

RS1M_R1_00001 from PANJIT International, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Cathode passive Cathode terminal; the color band denotes the cathode end, and the device is rated for a maximum recurrent peak reverse voltage of 1000 V (RS1M) and a maximum average rectified current of 1 A.
2 Anode passive Anode terminal, opposite the cathode band, for this surface-mount fast recovery rectifier with a maximum forward surge current of 30 A (8.3 ms half sine-wave) and a maximum reverse recovery time of 500 ns for RS1M.

Key specifications

Parameter Value
Manufacturer PANJIT International
Package SMA(DO-214AC)
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum Recurrent Peak Reverse Voltage (RS1M) VRRM 1000 V Maximum rating; RS1M column 1
Maximum RMS Voltage (RS1M) VRMS 700 V Maximum rating; RS1M column 1
Maximum DC Blocking Voltage (RS1M) VDC 1000 V Maximum rating; RS1M column 1
Maximum Average Rectified Current IF(AV) 1 A Printed as 1A; single value for all variants 1
Peak Forward Surge Current IFSM 30 A 8.3 ms single half sine-wave superimposed on rated load 1
Maximum Forward Voltage VF 1.3 V At 1 A 1
Maximum DC Reverse Current at Rated DC Blocking Voltage IR 150 μA TJ=125 °C, rated DC blocking voltage (value attribution to TJ=125 °C inferred from layout; see review) 1
Maximum Reverse Recovery Time (RS1M) trr 500 ns IF=0.5 A, IR=1 A, Irr=0.25 A (Note 1); column alignment inferred (see review) 1
Maximum Junction Capacitance CJ 12 pF Measured at 1 MHz and VR=4 V (Note 2) 1
Typical Junction Resistance, junction-to-ambient RθJA 100 °C/W Mounted on 8 mm² (0.013 mm thick) land areas (Note 3) 1
Typical Junction Resistance, junction-to-lead RθJL 32 °C/W Typical, as printed 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 °C Operating junction and storage temperature 1

CAD (KiCad official)

  • Symbol: RS1M_R1_00001
  • Footprint: Diode_SMD:D_SMA
  • 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
  • 3D model files: rs1m-r1-00001-etched.step / rs1m-r1-00001-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); rs1m-r1-00001.step / rs1m-r1-00001.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PANJIT International datasheet (5 pp, sha256 0102fe550e493aa8, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF